BV

Bruno Vajana

SS Stmicroelectronics Sa: 31 patents #76 of 4,662Top 2%
SS Sgs-Thomson Microelectronics S.A.: 11 patents #64 of 957Top 7%
Overall (All Time): #74,072 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 25 most recent of 42 patents

Patent #TitleCo-InventorsDate
6624015 Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2003-09-23
6614080 Mask programmed ROM inviolable by reverse engineering inspections and method of fabrication Matteo Patelmo 2003-09-02
6576517 Method for obtaining a multi-level ROM in an EEPROM process flow Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2003-06-10
6573130 Process for manufacturing electronic devices having non-salicidated non-volatile memory cells, non-salicidated HV transistors, and salicidated-junction LV transistors Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2003-06-03
6548857 Low resistance contact structure for a select transistor of EEPROM memory cells in a NO-DPCC process Giovanna Dalla Libera 2003-04-15
6548354 Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved information Roberta Bottini, Giovanna Dalla Libera, Federico Pio 2003-04-15
6528885 Anti-deciphering contacts Matteo Patelmo 2003-03-04
6521957 Method for forming a multilevel ROM memory in a dual gate CMOS process, and corresponding ROM memory cell Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2003-02-18
6501147 Process for manufacturing electronic devices comprising high voltage MOS transistors, and electronic device thus obtained Matteo Patelmo 2002-12-31
6479347 Simplified DSCP process for manufacturing FLOTOX EEPROM non-autoaligned semiconductor memory cells Giovanna Dalla Libera 2002-11-12
6444526 Simplified process for defining the tunnel area in non-aligned, non-volatile semiconductor memory cells Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2002-09-03
6437395 Process for the manufacturing of an electrically programmable non-volatile memory device Roberta Bottini, Giovanna Dalla Libera, Carlo Cremonesi 2002-08-20
6432762 Memory cell for EEPROM devices, and corresponding fabricating process Giovanna Dalla Libera, Roberta Bottini, Carlo Cremonesi 2002-08-13
6420769 Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctions Matteo Patelmo, Nadia Galbiati, Giovanna Dalla Libera 2002-07-16
6414349 High efficiency memory device Giovanna Dalla Libera, Matteo Patelmo, Nadia Galbiati 2002-07-02
6396101 Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2002-05-28
6380034 Process for manufacturing memory cells with dimensional control of the floating gate regions Giovanna Dalla Libera 2002-04-30
6350652 Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions Giovanna Dalla Libera, Matteo Patelmo 2002-02-26
6351008 Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2002-02-26
6340828 Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions Giovanna Dalla Libera, Matteo Patelmo 2002-01-22
6329254 Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method Carlo Cremonesi, Roberta Bottini, Giovanna Dalla Libera 2001-12-11
6320219 Memory cell for EEPROM devices and corresponding fabricating process Carlo Cremonesi, Roberta Bottini, Giovanna Dalla Libera 2001-11-20
6307229 Nonvolatile semiconductor memory device structure with superimposed bit lines and short-circuit metal strips Nicola Zatelli, Federico Pio 2001-10-23
6300181 Process for manufacturing an electronic device including MOS transistors with salicided junctions and non-salicided resistors Matteo Patelmo, Nadia Galbiati, Giovanna Dalla Libera 2001-10-09
6284607 Method of making high-voltage HV transistors with drain extension in a CMOS process of the dual gate type with silicide Matteo Patelmo, Giovanna Dalla Libera, Nadia Galbiati 2001-09-04