GL

Giovanna Dalla Libera

SS Sgs-Thomson Microelectronics S.A.: 4 patents #193 of 957Top 25%
SS Stmicroelectronics Sa: 1 patents #938 of 1,676Top 60%
📍 Monza, IT: #20 of 427 inventorsTop 5%
Overall (All Time): #260,083 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
6624015 Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2003-09-23
6576517 Method for obtaining a multi-level ROM in an EEPROM process flow Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2003-06-10
6573130 Process for manufacturing electronic devices having non-salicidated non-volatile memory cells, non-salicidated HV transistors, and salicidated-junction LV transistors Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2003-06-03
6548857 Low resistance contact structure for a select transistor of EEPROM memory cells in a NO-DPCC process Bruno Vajana 2003-04-15
6521957 Method for forming a multilevel ROM memory in a dual gate CMOS process, and corresponding ROM memory cell Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2003-02-18
6479347 Simplified DSCP process for manufacturing FLOTOX EEPROM non-autoaligned semiconductor memory cells Bruno Vajana 2002-11-12
6444526 Simplified process for defining the tunnel area in non-aligned, non-volatile semiconductor memory cells Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2002-09-03
6432762 Memory cell for EEPROM devices, and corresponding fabricating process Bruno Vajana, Roberta Bottini, Carlo Cremonesi 2002-08-13
6320219 Memory cell for EEPROM devices and corresponding fabricating process Bruno Vajana, Carlo Cremonesi, Roberta Bottini 2001-11-20
6300181 Process for manufacturing an electronic device including MOS transistors with salicided junctions and non-salicided resistors Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2001-10-09
6284607 Method of making high-voltage HV transistors with drain extension in a CMOS process of the dual gate type with silicide Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2001-09-04
6268247 Memory cell of the EEPROM type having its threshold set by implantation, and fabrication method Carlo Cremonesi, Bruno Vajana, Roberta Bottini 2001-07-31
6204531 Non-volatile memory structure and corresponding manufacturing process Federico Pio 2001-03-20
6194270 Process for the manufacturing of an electrically programmable non-volatile memory device Roberta Bottini, Bruno Vajana, Carlo Cremonesi 2001-02-27
6177313 Method for forming a muti-level ROM memory in a dual gate CMOS process, and corresponding ROM memory cell Matteo Patelmo, Nadia Galbiati, Bruno Vajana 2001-01-23
6097057 Memory cell for EEPROM devices, and corresponding fabricating process Bruno Vajana, Roberta Bottini, Carlo Cremonesi 2000-08-01
6080626 Memory cell for EEPROM devices, and corresponding fabricating process Bruno Vajana, Carlo Cremonesi, Roberta Bottini 2000-06-27
5985718 Process for fabricating memory cells with two levels of polysilicon for devices of EEPROM type Bruno Vajana, Roberta Bottini, Carlo Cremonesi 1999-11-16