| 10186605 |
Cyclic epitaxy process to form air gap isolation for a bipolar transistor |
Alexis Gauthier, Fabien Deprat |
2019-01-22 |
| 9412589 |
Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit |
David Barge, Philippe Garnier |
2016-08-09 |
| 8975154 |
Process for producing at least one deep trench isolation |
Didier Dutartre, Zahra Aitfqirali-Guerry, Denis Pellissier-Tanon |
2015-03-10 |
| 8603887 |
Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium |
Didier Dutartre, Nicolas L. Breil, Olivier Gourhant |
2013-12-10 |
| 8263965 |
Single-crystal semiconductor layer with heteroatomic macro-network |
Oliver Kermarrec, Daniel Bensahel |
2012-09-11 |
| 8178426 |
Method for manufacturing a structure of semiconductor-on-insulator type |
Aomar Halimaoui, Yves Morand, Olivier Kermarrec |
2012-05-15 |
| 7884352 |
Single-crystal semiconductor layer with heteroatomic macronetwork |
Daniel Bensahel, Oliver Kermarrec |
2011-02-08 |
| 7879679 |
Electronic component manufacturing method |
Oliver Kermarrec, Daniel Bensahel |
2011-02-01 |
| 7749817 |
Single-crystal layer on a dielectric layer |
Olivier Kermarec |
2010-07-06 |
| 7547914 |
Single-crystal layer on a dielectric layer |
Olivier Kermarec, Guillaume Pin |
2009-06-16 |
| 7381267 |
Heteroatomic single-crystal layers |
Daniel Bensahel, Olivier Kermarrec, Yves Morand, Vincent Cosnier |
2008-06-03 |
| 7129563 |
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material |
Vincent Cosnier, Yves Morand, Olivier Kermarrec, Daniel Bensahel |
2006-10-31 |
| 6690027 |
Method for making a device comprising layers of planes of quantum dots |
Daniel Bensahel, Caroline Hernandez |
2004-02-10 |
| 6596555 |
Forming of quantum dots |
Daniel Bensahel, Olivier Kermarrec |
2003-07-22 |
| 6537370 |
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained |
Caroline Hernandez, Daniel Bensahel |
2003-03-25 |
| 6429098 |
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained |
Daniel Bensahel, Caroline Hernandez, Maurice Rivoire |
2002-08-06 |
| 6399502 |
Process for fabricating a planar heterostructure |
Caroline Hernandez, Maurice Rivoire, Daniel Bensahel |
2002-06-04 |
| 6372581 |
Process for nitriding the gate oxide layer of a semiconductor device and device obtained |
Daniel Bensahel, Francois Martin, Caroline Hernandez |
2002-04-16 |
| 6255149 |
Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate |
Daniel Bensahel, Francois Martin, Caroline Hernandez |
2001-07-03 |
| 6117750 |
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively |
Daniel Bensahel, Caroline Hernandez, Maurice Rivoire |
2000-09-12 |
| 4847216 |
Process for the deposition by epitaxy of a doped material |
Francois A. d'Avitaya |
1989-07-11 |
| 4643914 |
Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process |
François Arnaud D'Avitaya, Roland Pantel |
1987-02-17 |
