CH

Caroline Hernandez

FT France Telecom: 7 patents #34 of 1,583Top 3%
CEA: 2 patents #2,014 of 7,956Top 30%
SS Stmicroelectronics (Rousset) Sas: 2 patents #149 of 397Top 40%
SS Stmicroelectronics Sa: 2 patents #1,857 of 4,662Top 40%
Overall (All Time): #383,352 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
8975557 Method and device for treating a surface 2015-03-10
8329498 Method of manufacturing a semiconductor wafer comprising an integrated optical filter 2012-12-11
7919022 Method for manufacturing lenses, in particular for CMOS imager 2011-04-05
7851826 Imager system comprising an integrated optical filter arranged between an imager and a transparent plate 2010-12-14
6690027 Method for making a device comprising layers of planes of quantum dots Daniel Bensahel, Yves Campidelli 2004-02-10
6551698 Method for treating a silicon substrate, by nitriding, to form a thin insulating layer Francois Martin, Daniel Bensahel, Laurent Vallier 2003-04-22
6537370 Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained Yves Campidelli, Daniel Bensahel 2003-03-25
6528399 MOSFET transistor with short channel effect compensated by the gate material Jerome Alieu, Michel Haond 2003-03-04
6429098 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained Daniel Bensahel, Yves Campidelli, Maurice Rivoire 2002-08-06
6399502 Process for fabricating a planar heterostructure Yves Campidelli, Maurice Rivoire, Daniel Bensahel 2002-06-04
6372581 Process for nitriding the gate oxide layer of a semiconductor device and device obtained Daniel Bensahel, Yves Campidelli, Francois Martin 2002-04-16
6255149 Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate Daniel Bensahel, Yves Campidelli, Francois Martin 2001-07-03
6117750 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively Daniel Bensahel, Yves Campidelli, Maurice Rivoire 2000-09-12