Daniel Bensahel — 36 Patents at Stmicroelectronics Sa

Daniel Bensahel has been granted 36 US patents while listed as an inventor at Stmicroelectronics Sa. The first was granted in 1980 and the most recent in December 2016. Daniel Bensahel ranks #92,222 of 4,157,543 US inventors in our database (top 2.2%). Patent records list Daniel Bensahel in Grenoble, FR.

Issued Patents All Time

Showing 1–25 of 36 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9525067	Method for forming integrated circuits on a strained semiconductor substrate	Aomar Halimaoui	2016-12-20	$4,759,000
9356094	Method for making a semi-conducting substrate located on an insulation layer	Aomar Halimaoui	2016-05-31	$2,643,000
8906776	Method for forming integrated circuits on a strained semiconductor substrate	Aomar Halimaoui	2014-12-09	$1,877,000
8895420	Method of fabricating a device with a concentration gradient and the corresponding device	Yves Morand	2014-11-25	$6,366,000
8575011	Method of fabricating a device with a concentration gradient and the corresponding device	Yves Morand	2013-11-05	$2,728,000
8536027	Method for making a semi-conducting substrate located on an insulation layer	Aomar Halimaoui	2013-09-17	$4,750,000
8263965	Single-crystal semiconductor layer with heteroatomic macro-network	Yves Campidelli, Oliver Kermarrec	2012-09-11	$5,943,000
8154091	Integrated electronic circuit including a thin film portion based on hafnium oxide	Catherine A. Dubourdieu, Erwan Yann Rauwel, Vincent Cosnier, Sandrine Lhostis	2012-04-10
8049224	Process for transferring a layer of strained semiconductor material	Bruno Ghyselen, Thomas Skotnicki	2011-11-01
7884352	Single-crystal semiconductor layer with heteroatomic macronetwork	Yves Campidelli, Oliver Kermarrec	2011-02-08	$7,193,000
7879679	Electronic component manufacturing method	Oliver Kermarrec, Yves Campidelli	2011-02-01	$5,941,000
7803694	Process for transferring a layer of strained semiconductor material	Bruno Ghyselen, Thomas Skotnicki	2010-09-28
7534701	Process for transferring a layer of strained semiconductor material	Bruno Ghyselen, Thomas Skotnicki	2009-05-19
7381267	Heteroatomic single-crystal layers	Olivier Kermarrec, Yves Morand, Yves Campidelli, Vincent Cosnier	2008-06-03	$5,441,000
7338883	Process for transferring a layer of strained semiconductor material	Bruno Ghyselen, Thomas Skotnicki	2008-03-04
7279404	Process for fabricating strained layers of silicon or of a silicon/germanium alloy	Aomar Halimaoui	2007-10-09	$3,290,000
7129563	Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material	Vincent Cosnier, Yves Morand, Olivier Kermarrec, Yves Campidelli	2006-10-31	$10,056,000
7033438	Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate	—	2006-04-25	$5,153,000
6989570	Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit	Thomas Skotnicki	2006-01-24	$8,000,000
6969661	Method for forming a localized region of a material difficult to etch	Aomar Halimaoui	2005-11-29	$6,914,000
6953736	Process for transferring a layer of strained semiconductor material	Bruno Ghyselen, Thomas Skotnicki	2005-10-11
6690027	Method for making a device comprising layers of planes of quantum dots	Yves Campidelli, Caroline Hernandez	2004-02-10	$1,280,000
6596555	Forming of quantum dots	Olivier Kermarrec, Yves Campidelli	2003-07-22	$36,278,000
6551698	Method for treating a silicon substrate, by nitriding, to form a thin insulating layer	Francois Martin, Caroline Hernandez, Laurent Vallier	2003-04-22
6537370	Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained	Caroline Hernandez, Yves Campidelli	2003-03-25	$1,167,000

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Daniel Bensahel — 36 Patents

Issued Patents All Time

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