Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a localized region of a material difficult to etch

Method for forming a localized region of a material difficult to etch

US Patent 6969661 · Granted Nov 29, 2005

Estimated economic value: $6,914,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrically conductive element2023
Method for securing an integrated circuit upon making it2022
Method of manufacturing a memory device2020
Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-me2019
Method for causing tensile strain in a semiconductor film2017
Method for forming integrated circuits on a strained semiconductor substrate2016
Method for forming integrated circuits on a strained semiconductor substrate2016
Method of forming a strained silicon layer2016
Method for making a semi-conducting substrate located on an insulation layer2016
Method for making a semi-conducting substrate located on an insulation layer2016
Process for assembling two wafers and corresponding device2016
Housing, in particular for a biofuel cell2015