Issued Patents All Time
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5757081 | Surface mount and flip chip technology for total integrated circuit isolation | King Owyang, Fwu-Iuan Hshieh, Yueh-Se Ho, Jowei Dun | 1998-05-26 |
| 5753529 | Surface mount and flip chip technology for total integrated circuit isolation | King Owyang, Fwu-Iuan Hshieh, Yueh-Se Ho, Jowei Dun | 1998-05-19 |
| 5750416 | Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance | Fwu-Iuan Hshieh, Jan Van Der Linde, Yueh-Se Ho | 1998-05-12 |
| 5689128 | High density trenched DMOS transistor | Fwu-Iuan Hshieh, Kuo-In Chen, Richard K. Williams, Mohamed N. Darwish | 1997-11-18 |
| 5639676 | Trenched DMOS transistor fabrication having thick termination region oxide | Fwu-Iuan Hshieh, Yueh-Se Ho, King Owyang | 1997-06-17 |
| 5629543 | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness | Fwu-Iuan Hshieh, Lih-Ying Ching, Sze Him Ng, William H. Cook | 1997-05-13 |
| 5592005 | Punch-through field effect transistor | Brian H. Floyd, Fwu-Iuan Hshieh | 1997-01-07 |
| 5578851 | Trenched DMOS transistor having thick field oxide in termination region | Fwu-Iuan Hshieh, Yueh-Se Ho, King Owyang | 1996-11-26 |
| 5558313 | Trench field effect transistor with reduced punch-through susceptibility and low R.sub.DSon | Fwu-Iuan Hshieh | 1996-09-24 |
| 5532179 | Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof | Fwu-Iuan Hshieh, Sze-Hon Kwan, King Owyang | 1996-07-02 |
| 5521409 | Structure of power mosfets, including termination structures | Fwu-Iuan Hshieh, Jun-Wei Chen, King Owyang, Dorman C. Pitzer, Jan Van Der Linde | 1996-05-28 |
| 5486772 | Reliability test method for semiconductor trench devices | Fwu-Iuan Hshieh, Calvin Choi, William H. Cook, Lih-Ying Ching | 1996-01-23 |
| 5479037 | Low threshold voltage epitaxial DMOS technology | Fwu-Iuan Hshieh, Hamza Yilmaz | 1995-12-26 |
| 5474943 | Method for fabricating a short channel trenched DMOS transistor | Fwu-Iuan Hshieh, Hamza Yilmaz | 1995-12-12 |
| 5468982 | Trenched DMOS transistor with channel block at cell trench corners | Fwu-Iuan Hshieh, Sze-Hon Kwan, Yueh-Se Ho, Jan Van Der Linde, King Owyang | 1995-11-21 |
| 5439842 | Low temperature oxide layer over field implant mask | David G. Grasso, Jun-Wei Chen | 1995-08-08 |
| 5429964 | Low on-resistance power MOS technology | Hamza Yilmaz, Fwu-Iuan Hshieh, Jun-Wei Chen, King Owyang, Dorman C. Pitzer +1 more | 1995-07-04 |
| 5426325 | Metal crossover in high voltage IC with graduated doping control | King Owyang, Richard K. Williams | 1995-06-20 |
| 5404040 | Structure and fabrication of power MOSFETs, including termination structures | Fwu-Iuan Hshieh, Jun-Wei Chen, King Owyang, Dorman C. Pitzer, Jan V. D. Linde | 1995-04-04 |
| 5374843 | Lightly-doped drain MOSFET with improved breakdown characteristics | Richard K. Williams, Michael E. Cornell, David G. Grasso, Agnes Yeung, Juiping Chuang | 1994-12-20 |
| 5341011 | Short channel trenched DMOS transistor | Fwu-Iuan Hshieh, Hamza Yilmaz | 1994-08-23 |
| 5328866 | Low temperature oxide layer over field implant mask | David G. Grasso, Jun-Wei Chen | 1994-07-12 |
| 5316959 | Trenched DMOS transistor fabrication using six masks | Sze-Hon Kwan, Fwu-Iuan Hshieh, Yueh-Se Ho, King Owyang | 1994-05-31 |
| 5304831 | Low on-resistance power MOS technology | Hamza Yilmaz, Fwu-Iuan Hshieh, Jun-Wei Chen, King Owyang, Dorman C. Pitzer +1 more | 1994-04-19 |
| 5132753 | Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs | King Owyang | 1992-07-21 |