Issued Patents All Time
Showing 101–125 of 148 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7881096 | Asymmetric write current compensation | Wenzhong Zhu, Xiaobin Wang, Yiran Chen, Alan Xuguang Wang, Xiaohua Lou +1 more | 2011-02-01 |
| 7876604 | Stram with self-reference read scheme | Yuankai Zheng, Yiran Chen, Xiaobin Wang, Zheng Gao, Dimitar V. Dimitrov +1 more | 2011-01-25 |
| 7830700 | Resistive sense memory array with partial block update capability | Yiran Chen, Daniel S. Reed, Harry Hongyue Liu, Hai Li | 2010-11-09 |
| 7830708 | Compensating for variations in memory cell programmed state distributions | Chulmin Jung, Harry Hongyue Liu | 2010-11-09 |
| 7830726 | Data storage using read-mask-write operation | Henry Huang, Hai Li | 2010-11-09 |
| 7825478 | Polarity dependent switch for resistive sense memory | Chulmin Jung, Maroun Georges Khoury, Young-Pil Kim | 2010-11-02 |
| 7826255 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yiran Chen, Yuankai Zheng +3 more | 2010-11-02 |
| 7755965 | Temperature dependent system for reading ST-RAM | Yiran Chen, Hai Li, Hongyue Liu, Henry Huang | 2010-07-13 |
| 7755923 | Memory array with read reference voltage cells | Hongyue Liu, Andrew John Carter, Yiran Chen, Hai Li | 2010-07-13 |
| 7389451 | Memory redundancy with programmable control | Theodore Zhu, Gary Kirchner, Richard W. Swanson | 2008-06-17 |
| 7372723 | State save-on-power-down using GMR non-volatile elements | Romney R. Katti | 2008-05-13 |
| 7328379 | Look-up table for use with redundant memory | Theodore Zhu, Gary Kirchner, Richard W. Swanson | 2008-02-05 |
| 7208323 | Method for forming magneto-resistive memory cells with shape anisotropy | Theodore Zhu, Anthony Arrott, Joel Drewes | 2007-04-24 |
| 7200035 | Magneto-resistive memory cell structures with improved selectivity | Theodore Zhu, Anthony Arrott | 2007-04-03 |
| 7092285 | State save-on-power-down using GMR non-volatile elements | Romney R. Katti | 2006-08-15 |
| 7029923 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more | 2006-04-18 |
| 6992918 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, William Larson | 2006-01-31 |
| 6985382 | Bridge-type magnetic random access memory (MRAM) latch | David E. Fulkerson | 2006-01-10 |
| 6972988 | State save-on-power-down using GMR non-volatile elements | Romney R. Katti | 2005-12-06 |
| 6968482 | Memory redundancy with programmable non-volatile control | Theodore Zhu, Gary Kirchner, Richard W. Swanson | 2005-11-22 |
| 6920064 | Magneto-resistive memory cell structures with improved selectivity | Theodore Zhu, Anthony Arrott | 2005-07-19 |
| 6906950 | Magneto-resistive memory cell with shape anistropy and memory device thereof | Theodore Zhu, Anthony Arrott, Joel Drewes | 2005-06-14 |
| 6887719 | Magnetoresistive random access memory (MRAM) cell patterning | Theodore Zhu | 2005-05-03 |
| 6872997 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more | 2005-03-29 |
| 6865106 | Bridge-type magnetic random access memory (MRAM) latch | David E. Fulkerson | 2005-03-08 |