Issued Patents All Time
Showing 51–75 of 148 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8416615 | Transmission gate-based spin-transfer torque memory unit | Yiran Chen, Hai Li, Hongyue Liu, Yang Li | 2013-04-09 |
| 8367258 | Electric power source arrangement and method of how to use it | Zhijun Gu, Ke Jin | 2013-02-05 |
| 8363450 | Hierarchical cross-point array of non-volatile memory | Chulmin Jung, Insik Jin, YoungPil Kim, Harry Hongyue Liu | 2013-01-29 |
| 8363449 | Floating source line architecture for non-volatile memory | Chulmin Jung, Harry Hongyue Liu | 2013-01-29 |
| 8324607 | Mirrored-gate cell for non-volatile memory | Roger Glenn Rolbiecki, Andrew John Carter | 2012-12-04 |
| 8320169 | Asymmetric write current compensation | Wenzhong Zhu, Xiaobin Wang, Yiran Chen, Alan Xuguang Wang, Xiaohua Lou +1 more | 2012-11-27 |
| 8296620 | Data devices including multiple error correction codes and methods of utilizing | Yiran Chen, Hai Li, Hongyue Liu, Song S. Xue | 2012-10-23 |
| 8289746 | MRAM diode array and access method | Yiran Chen, Hai Li, Hongyue Liu, Song S. Xue | 2012-10-16 |
| 8289759 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu +3 more | 2012-10-16 |
| 8289786 | Data storage using read-mask-write operation | Henry Huang, Hai Li | 2012-10-16 |
| 8289752 | Asymmetric write current compensation using gate overdrive for resistive sense memory cells | Harry Hongyue Liu | 2012-10-16 |
| 8248836 | Non-volatile memory cell stack with dual resistive elements | Insik Jin, YoungPil Kim, Ming Sun, Chulmin Jung, Venugopalan Vaithyanathan +2 more | 2012-08-21 |
| 8213259 | Non-volatile memory cell with resistive sense element block erase and uni-directional write | Daniel S. Reed, Andrew John Carter, Hai Li | 2012-07-03 |
| 8203869 | Bit line charge accumulation sensing for resistive changing memory | Chulmin Jung, Kang-Yong Kim, Young-Pil Kim | 2012-06-19 |
| 8203894 | Current cancellation for non-volatile memory | Chulmin Jung, Insik Jin, YoungPil Kim, Harry Hongyue Liu, Andrew John Carter | 2012-06-19 |
| 8199563 | Transmission gate-based spin-transfer torque memory unit | Yiran Chen, Hai Li, Hongyue Liu, Yang Li | 2012-06-12 |
| 8194444 | Spin-transfer torque memory self-reference read method | Yuankai Zheng, Yiran Chen, Xiaobin Wang, Zheng Gao, Dimitar V. Dimitrov +1 more | 2012-06-05 |
| 8194438 | nvSRAM having variable magnetic resistors | Yongchul Ahn, Antoine Khoueir, Hongyue Liu | 2012-06-05 |
| 8194437 | Computer memory device with multiple interfaces | Yiran Chen, Daniel S. Reed, Harry Hongyue Liu, Hai Li, Rod V. Bowman | 2012-06-05 |
| 8125819 | Asymmetric write current compensation using gate overdrive for resistive sense memory cells | Harry Hongyue Liu | 2012-02-28 |
| 8120941 | Bidirectional non-volatile memory array architecture | Andrew John Carter | 2012-02-21 |
| 8107282 | Asymmetric write current compensation | Wenzhong Zhu, Xiaobin Wang, Yiran Chen, Alan Xuguang Wang, Xiaohua Lou +1 more | 2012-01-31 |
| 8098538 | Spin-torque bit cell with unpinned reference layer and unidirectional write current | Daniel S. Reed, Song S. Xue, Dimitar V. Dimitrov, Paul E. Anderson | 2012-01-17 |
| 8098513 | Memory array with read reference voltage cells | Hongyue Liu, Andrew John Carter, Yiran Chen, Hai Li | 2012-01-17 |
| 8098507 | Hierarchical cross-point array of non-volatile memory | Chulmin Jung, Insik Jin, YoungPil Kim, Harry Hongyue Liu | 2012-01-17 |