Issued Patents All Time
Showing 25 most recent of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10235621 | Architecture for implementing an improved neural network | — | 2019-03-19 |
| 8503224 | Spintronic devices with integrated transistors | Romney R. Katti | 2013-08-06 |
| 8164948 | Spintronic devices with integrated transistors | Romney R. Katti | 2012-04-24 |
| 8004882 | Spintronic devices with integrated transistors | Romney R. Katti | 2011-08-23 |
| 7427514 | Passivated magneto-resistive bit structure and passivation method therefor | Harry Hongyue Liu, Lonny Berg, William Larson, Shaoping Li, Joel Drewes | 2008-09-23 |
| 7389451 | Memory redundancy with programmable control | Gary Kirchner, Richard W. Swanson, Yong Lu | 2008-06-17 |
| 7339818 | Spintronic devices with integrated transistors | Romney R. Katti | 2008-03-04 |
| 7328379 | Look-up table for use with redundant memory | Gary Kirchner, Richard W. Swanson, Yong Lu | 2008-02-05 |
| 7208323 | Method for forming magneto-resistive memory cells with shape anisotropy | Yong Lu, Anthony Arrott, Joel Drewes | 2007-04-24 |
| 7200035 | Magneto-resistive memory cell structures with improved selectivity | Yong Lu, Anthony Arrott | 2007-04-03 |
| 7166479 | Methods of forming magnetic shielding for a thin-film memory element | Jeffrey S. Sather | 2007-01-23 |
| 7038940 | Pulsed write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Anthony Arrott | 2006-05-02 |
| 7029923 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Shaoping Li, Romney R. Katti +2 more | 2006-04-18 |
| 6992918 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Anthony Arrott, Harry Hongyue Liu, William Larson, Yong Lu | 2006-01-31 |
| 6968482 | Memory redundancy with programmable non-volatile control | Gary Kirchner, Richard W. Swanson, Yong Lu | 2005-11-22 |
| 6920064 | Magneto-resistive memory cell structures with improved selectivity | Yong Lu, Anthony Arrott | 2005-07-19 |
| 6906950 | Magneto-resistive memory cell with shape anistropy and memory device thereof | Yong Lu, Anthony Arrott, Joel Drewes | 2005-06-14 |
| 6887719 | Magnetoresistive random access memory (MRAM) cell patterning | Yong Lu | 2005-05-03 |
| 6872997 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Shaoping Li, Romney R. Katti +2 more | 2005-03-29 |
| 6872993 | Thin film memory device having local and external magnetic shielding | Jeffrey S. Sather | 2005-03-29 |
| 6862700 | Memory redundancy with programmable non-volatile control | Gary Kirchner, Richard W. Swanson, Yong Lu | 2005-03-01 |
| 6850431 | Pulsed write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Anthony Arrott | 2005-02-01 |
| 6806546 | Passivated magneto-resistive bit structure | Harry Hongyue Liu, Lonny Berg, William Larson, Shaoping Li, Joel Drewes | 2004-10-19 |
| 6791856 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Anthony Arrott, Harry Hongyue Liu, William Larson, Yong Lu | 2004-09-14 |
| 6765820 | Magneto-resistive memory array | Yong Lu, Romney R. Katti | 2004-07-20 |