| 9818742 |
Semiconductor device isolation using an aligned diffusion and polysilicon field plate |
— |
2017-11-14 |
|
| 8536659 |
Semiconductor device with integrated channel stop and body contact |
Gregory Michaelson |
2013-09-17 |
|
| 7427514 |
Passivated magneto-resistive bit structure and passivation method therefor |
Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes |
2008-09-23 |
$1,890,000 |
| 7169679 |
Varactor with improved tuning range |
Cheisan Yue, Mohammed A. Fathimulla, Eric E. Vogt |
2007-01-30 |
$13,257,000 |
| 7029923 |
Method for manufacture of magneto-resistive bit structure |
Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more |
2006-04-18 |
$2,761,000 |
| 6992918 |
Methods of increasing write selectivity in an MRAM |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2006-01-31 |
$2,844,000 |
| 6872997 |
Method for manufacture of magneto-resistive bit structure |
Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more |
2005-03-29 |
$1,446,000 |
| 6806546 |
Passivated magneto-resistive bit structure |
Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes |
2004-10-19 |
$1,661,000 |
| 6791856 |
Methods of increasing write selectivity in an MRAM |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2004-09-14 |
$1,322,000 |
| 6756240 |
Methods of increasing write selectivity in an MRAM |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2004-06-29 |
$1,990,000 |
| 6717194 |
Magneto-resistive bit structure and method of manufacture therefor |
Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more |
2004-04-06 |
$2,363,000 |
| 6623987 |
Passivated magneto-resistive bit structure and passivation method therefor |
Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes |
2003-09-23 |
$3,145,000 |
| 6522574 |
MRAM architectures for increased write selectivity |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2003-02-18 |
$1,955,000 |
| 6424561 |
MRAM architecture using offset bits for increased write selectivity |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2002-07-23 |
$3,822,000 |
| 6424564 |
MRAM architectures for increased write selectivity |
Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu |
2002-07-23 |
$3,822,000 |
| 6392922 |
Passivated magneto-resistive bit structure and passivation method therefor |
Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes |
2002-05-21 |
$4,895,000 |
| 5907784 |
Method of making multi-layer gate structure with different stoichiometry silicide layers |
— |
1999-05-25 |
$6,023,000 |
| 5821623 |
Multi-layer gate structure |
— |
1998-10-13 |
$1,472,000 |
| 5635765 |
Multi-layer gate structure |
— |
1997-06-03 |
$4,924,000 |
| 5580814 |
Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor |
— |
1996-12-03 |
$4,312,000 |
| 5495117 |
Stacked ferroelectric memory cell |
— |
1996-02-27 |
$5,385,000 |
| 5371699 |
Non-volatile ferroelectric memory with folded bit lines and method of making the same |
— |
1994-12-06 |
$1,919,000 |
| 5216572 |
Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors |
Paul J. Schuele |
1993-06-01 |
$1,573,000 |
| 5206788 |
Series ferroelectric capacitor structure for monolithic integrated circuits and method |
Thomas E. Davenport, Constance DeSmith |
1993-04-27 |
|
| 5005102 |
Multilayer electrodes for integrated circuit capacitors |
— |
1991-04-02 |
$106,000 |
