WL

William Larson

Micron: 13 patents #1,214 of 6,345Top 20%
RI Ramtron International: 4 patents #20 of 82Top 25%
Cypress Semiconductor: 3 patents #568 of 1,852Top 35%
RA Ramtron: 2 patents #6 of 21Top 30%
PS Polar Semiconductor: 1 patents #18 of 32Top 60%
HO Honeywell: 1 patents #7,507 of 14,447Top 55%
Overall (All Time): #164,284 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9818742 Semiconductor device isolation using an aligned diffusion and polysilicon field plate — 2017-11-14
8536659 Semiconductor device with integrated channel stop and body contact Gregory Michaelson 2013-09-17
7427514 Passivated magneto-resistive bit structure and passivation method therefor Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes 2008-09-23
7169679 Varactor with improved tuning range Cheisan Yue, Mohammed A. Fathimulla, Eric E. Vogt 2007-01-30
7029923 Method for manufacture of magneto-resistive bit structure Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more 2006-04-18
6992918 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2006-01-31
6872997 Method for manufacture of magneto-resistive bit structure Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more 2005-03-29
6806546 Passivated magneto-resistive bit structure Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes 2004-10-19
6791856 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2004-09-14
6756240 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2004-06-29
6717194 Magneto-resistive bit structure and method of manufacture therefor Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more 2004-04-06
6623987 Passivated magneto-resistive bit structure and passivation method therefor Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes 2003-09-23
6522574 MRAM architectures for increased write selectivity Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2003-02-18
6424561 MRAM architecture using offset bits for increased write selectivity Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2002-07-23
6424564 MRAM architectures for increased write selectivity Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu 2002-07-23
6392922 Passivated magneto-resistive bit structure and passivation method therefor Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes 2002-05-21
5907784 Method of making multi-layer gate structure with different stoichiometry silicide layers — 1999-05-25
5821623 Multi-layer gate structure — 1998-10-13
5635765 Multi-layer gate structure — 1997-06-03
5580814 Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor — 1996-12-03
5495117 Stacked ferroelectric memory cell — 1996-02-27
5371699 Non-volatile ferroelectric memory with folded bit lines and method of making the same — 1994-12-06
5216572 Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors Paul J. Schuele 1993-06-01
5206788 Series ferroelectric capacitor structure for monolithic integrated circuits and method Thomas E. Davenport, Constance DeSmith 1993-04-27
5005102 Multilayer electrodes for integrated circuit capacitors — 1991-04-02