AA

Anthony Arrott

Micron: 19 patents #907 of 6,345Top 15%
Overall (All Time): #241,767 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7208323 Method for forming magneto-resistive memory cells with shape anisotropy Theodore Zhu, Yong Lu, Joel Drewes 2007-04-24
7200035 Magneto-resistive memory cell structures with improved selectivity Theodore Zhu, Yong Lu 2007-04-03
7038940 Pulsed write techniques for magneto-resistive memories Richard W. Swanson, William J. Johnson, Theodore Zhu 2006-05-02
7029923 Method for manufacture of magneto-resistive bit structure Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more 2006-04-18
6992918 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2006-01-31
6920064 Magneto-resistive memory cell structures with improved selectivity Theodore Zhu, Yong Lu 2005-07-19
6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof Theodore Zhu, Yong Lu, Joel Drewes 2005-06-14
6872997 Method for manufacture of magneto-resistive bit structure Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more 2005-03-29
6850431 Pulsed write techniques for magneto-resistive memories Richard W. Swanson, William J. Johnson, Theodore Zhu 2005-02-01
6791856 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2004-09-14
6765823 Magnetic memory cell with shape anisotropy Theodore Zhu, Yong Lu, Joel Drewes 2004-07-20
6756240 Methods of increasing write selectivity in an MRAM Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2004-06-29
6735112 Magneto-resistive memory cell structures with improved selectivity Theodore Zhu, Yong Lu 2004-05-11
6724654 Pulsed write techniques for magneto-resistive memories Richard W. Swanson, William J. Johnson, Theodore Zhu 2004-04-20
6717194 Magneto-resistive bit structure and method of manufacture therefor Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more 2004-04-06
6522574 MRAM architectures for increased write selectivity Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2003-02-18
6493259 Pulse write techniques for magneto-resistive memories Richard W. Swanson, William J. Johnson, Theodore Zhu 2002-12-10
6424561 MRAM architecture using offset bits for increased write selectivity Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2002-07-23
6424564 MRAM architectures for increased write selectivity Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu 2002-07-23