Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7208323 | Method for forming magneto-resistive memory cells with shape anisotropy | Theodore Zhu, Yong Lu, Joel Drewes | 2007-04-24 |
| 7200035 | Magneto-resistive memory cell structures with improved selectivity | Theodore Zhu, Yong Lu | 2007-04-03 |
| 7038940 | Pulsed write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Theodore Zhu | 2006-05-02 |
| 7029923 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more | 2006-04-18 |
| 6992918 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2006-01-31 |
| 6920064 | Magneto-resistive memory cell structures with improved selectivity | Theodore Zhu, Yong Lu | 2005-07-19 |
| 6906950 | Magneto-resistive memory cell with shape anistropy and memory device thereof | Theodore Zhu, Yong Lu, Joel Drewes | 2005-06-14 |
| 6872997 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more | 2005-03-29 |
| 6850431 | Pulsed write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Theodore Zhu | 2005-02-01 |
| 6791856 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2004-09-14 |
| 6765823 | Magnetic memory cell with shape anisotropy | Theodore Zhu, Yong Lu, Joel Drewes | 2004-07-20 |
| 6756240 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2004-06-29 |
| 6735112 | Magneto-resistive memory cell structures with improved selectivity | Theodore Zhu, Yong Lu | 2004-05-11 |
| 6724654 | Pulsed write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Theodore Zhu | 2004-04-20 |
| 6717194 | Magneto-resistive bit structure and method of manufacture therefor | Harry Hongyue Liu, William Larson, Lonny Berg, Theodore Zhu, Shaoping Li +2 more | 2004-04-06 |
| 6522574 | MRAM architectures for increased write selectivity | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2003-02-18 |
| 6493259 | Pulse write techniques for magneto-resistive memories | Richard W. Swanson, William J. Johnson, Theodore Zhu | 2002-12-10 |
| 6424561 | MRAM architecture using offset bits for increased write selectivity | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2002-07-23 |
| 6424564 | MRAM architectures for increased write selectivity | Shaoping Li, Theodore Zhu, Harry Hongyue Liu, William Larson, Yong Lu | 2002-07-23 |