Issued Patents All Time
Showing 26–50 of 95 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10020050 | Local bit line-sharing memory device and method of driving the same | Tae Woo Oh, Hanwool Jeong | 2018-07-10 |
| 10008270 | Non-volatile memory device and programming method thereof | Yo Han LEE, Ji-Suk Kim, Chang-Yeon Yu, Jin Young Chun, Se-heon Baek +2 more | 2018-06-26 |
| 9989582 | Device for measuring threshold voltage of a transistor based on constant drain voltage and constant drain source current | Youngjae An, Jung-Hyun Park, Kiryong Kim, Hyucksang Yim | 2018-06-05 |
| 9978458 | Memory device, memory system, and read/verify operation method of the memory device | Yo Han LEE, Ji-Suk Kim, Chang-Yeon Yu, Jin Young Chun, Se-heon Baek +2 more | 2018-05-22 |
| 9875788 | Low-power 5T SRAM with improved stability and reduced bitcell size | Hyunkook Park, Seung-Chul Song, Mohamed H. Abu-Rahma, Lixin Ge, Zhongze Wang +1 more | 2018-01-23 |
| 9865330 | Stable SRAM bitcell design utilizing independent gate FinFET | Mingu Kang, Hyunkook Park, Seung-Chul Song, Mohamed H. Abu-Rahma, Beom-Mo Han +2 more | 2018-01-09 |
| 9852783 | Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages | Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-12-26 |
| 9800271 | Error correction and decoding | Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim, Jung Pill Kim +3 more | 2017-10-24 |
| 9728259 | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin | Byung Kyu Song, Taehui Na, Jung Pill Kim, Seung H. Kang | 2017-08-08 |
| 9691462 | Latch offset cancelation for magnetoresistive random access memory | Taehui Na, Byungkyu Song, Jung Pill Kim, Seung H. Kang | 2017-06-27 |
| 9666259 | Dual mode sensing scheme | Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-05-30 |
| 9583178 | SRAM read preferred bit cell with write assist circuit | Younghwi Yang, Bin Yang, Choh Fei Yeap | 2017-02-28 |
| 9574948 | Temperature sensor and temperature sensing method | Kyungho Ryu, Dong Hun Jung, Young Jae An | 2017-02-21 |
| 9502088 | Constant sensing current for reading resistive memory | Sara Choi, Jisu Kim, Taehui Na, Jung Pill Kim, Seung H. Kang | 2016-11-22 |
| 9502091 | Sensing circuit for resistive memory cells | Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2016-11-22 |
| 9496027 | Static random access memory device including write assist circuit and writing method thereof | Woojin Rim, Taejoong Song, Gyuhong Kim, Hanwool Jeong | 2016-11-15 |
| 9460777 | SRAM read buffer with reduced sensing delay and improved sensing margin | Younghwi Yang, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap | 2016-10-04 |
| 9413236 | Voltage converter | Jin-Hyuk Kim, Dong-Hoon Jung, Kyung-Ho Ryu, Byoung-Chan Oh | 2016-08-09 |
| 9406354 | System, apparatus, and method for an offset cancelling single ended sensing circuit | Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-08-02 |
| 9390779 | System and method of sensing a memory cell | Taehui Na, Jisu Kim, Seung H. Kang, Jung Pill Kim | 2016-07-12 |
| 9378781 | System, apparatus, and method for sense amplifiers | Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-06-28 |
| 9336863 | Dual write wordline memory cell | Younghwi Yang, Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang | 2016-05-10 |
| 9281039 | System and method to provide a reference cell using magnetic tunnel junction cells | Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-03-08 |
| 9196337 | Low sensing current non-volatile flip-flop | Youngdon Jung, Kyungho Ryu, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2015-11-24 |
| 9165630 | Offset canceling dual stage sensing circuit | Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2015-10-20 |