Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for achieving ultra-high selectivity while etching silicon nitride

Method for achieving ultra-high selectivity while etching silicon nitride

US Patent 9911620 · Granted Mar 6, 2018

Estimated economic value: $34,721,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power supply apparatus for self-powered device and operation method thereof2025
Semiconductor device and semiconductor system2025
Ion beam etching with sidewall cleaning2025
Biosignal processing apparatus based on intelligent control2024
Ion beam etching with sidewall cleaning2024
Power management apparatus based on user pattern and method2024
Accumulator, operational logic circuit including accumulator, and processing-in-2024
Electron excitation atomic layer etch2023
Memory device and test operation thereof2022
Predicting etch characteristics in thermal etching and atomic layer etching2022
Ultrahigh selective nitride etch to form FinFET devices2022
Ultrahigh selective nitride etch to form FinFET devices2022