Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

US Patent 9837319 · Granted Dec 5, 2017

Estimated economic value: $3,039,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with biofet and biometric sensors2025
Integration of nanosheets with bottom dielectric isolation and ideal diode2025
Gate-all-around integrated circuit structures having devices with channel-to-sub2025
Reference voltage adjustment per path for high speed memory signaling2025
Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to 2025
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures2025
Substrate-free integrated circuit structures2025
Heterogeneous integrated multi-chip cooler module2025
Gate-all-around integrated circuit structures having insulator substrate2025
Gate-all-around integrated circuit structures having devices with source/drain-t2025
Duty cycle adjuster optimization training algorithm to minimize the jitter assoc2025
Gate-all-around integrated circuit structures having adjacent structures for sub2025