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Home › 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach

3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach

US Patent 9530740 · Granted Dec 27, 2016

Estimated economic value: $11,980,000 ⓘ

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