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Home › 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach

3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach

US Patent 9142510 · Granted Sep 22, 2015

Estimated economic value: $9,820,000 ⓘ

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