Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor performance using a two-step damage anneal

Transistor performance using a two-step damage anneal

US Patent 8828855 · Granted Sep 9, 2014

Estimated economic value: $5,271,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conductive superlattice structures and methods of forming the same2025
Method of forming a FET structure by selective deposition of film on source/drai2025
Dual metal wrap-around contacts for semiconductor devices2025
Method for filling recessed features in semiconductor devices with a low-resisti2025
Carbon, nitrogen and/or fluorine co-implants for low resistance transistors2024
Low resistance source drain contact formation with trench metastable alloys and 2023
Dual metal wrap-around contacts for semiconductor devices2022
Reverse contact and silicide process for three-dimensional logic devices2022
Robust low-k bottom spacer for VFET2021
Dual metal contacts with ruthenium metal plugs for semiconductor devices2021
Integrated trench capacitor with top plate having reduced voids2021
High mobility transistors2021