Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Carbon, nitrogen and/or fluorine co-implants for low resistance transistors

Carbon, nitrogen and/or fluorine co-implants for low resistance transistors

US Patent 12015057 · Granted Jun 18, 2024

Estimated economic value: $58,381,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Small grain size polysilicon engineering for threshold voltage mismatch improvem2025
Moveable wing tip arrangements2025
Shallow trench isolation structure with nitride pullback by implantation treatme2025
Breakdown diodes and methods of making the same2025
Integration scheme to build resistor, capacitor, efuse using silicon-rich dielec2025
Polysilicon resistor implant for reduced resistance temperature coefficient vari2025
LOCOS fillet for drain reduced breakdown in high voltage transistors2025
LOCOS fillet for drain reduced breakdown in high voltage transistors2025
Channel stop and well dopant migration control implant for reduced MOS threshold2025
System for determining leakage current of a field effect transistor over tempera2025
Advanced poly resistor and CMOS transistor2025
High voltage avalanche diode for active clamp drivers2025