Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor

Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor

US Patent 8679912 · Granted Mar 25, 2014

Estimated economic value: $6,861,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Staggered read recovery for improved read window budget in a three dimensional (2025
Method of forming high-voltage transistor with thin gate poly2024
Method of forming high-voltage transistor with thin gate poly2023
Resistance reduction for word lines in memory arrays2023
Embedded non-volatile memory device and fabrication method of the same2020
Split-gate flash cell formed on recessed substrate2019
Method of forming high-voltage transistor with thin gate poly2019
Methods and structures for a split gate memory cell structure2018
Split gate device with doped region and method therefor2018
Split-gate flash cell formed on recessed substrate2017
Semiconductor device including an active region and two layers having different 2017
Method of forming split gate memory with improved reliability2017