Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains

Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains

US Patent 8501508 · Granted Aug 6, 2013

Estimated economic value: $18,826,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Trench-based quantum dot devices with conductive liners2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Conductive contacts wrapped around epitaxial source or drain regions2025
Staircase-based metal-insulator-metal (MIM) capacitors2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Co-deposition of titanium and silicon for improved silicon germanium source and 2025
Compositional engineering of Schottky diode2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Transistor gate trench engineering to decrease capacitance and resistance2025