Willman Tsai — 6 Patents at Intel

Willman Tsai has been granted 6 US patents while listed as an inventor at Intel. The first was granted in 2010 and the most recent in September 2018. Willman Tsai ranks #779,687 of 4,157,543 US inventors in our database (top 18.8%). Patent records list Willman Tsai in Saratoga, CA, US.

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
10084058	Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2018-09-25	$26,257,000
9443936	Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2016-09-13	$11,798,000
8501508	Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2013-08-06	$18,826,000
8258498	Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2012-09-04	$13,616,000
7947971	Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2011-05-24	$35,173,000
7759142	Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains	Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more	2010-07-20	$9,455,000

Willman Tsai — 6 Patents

Issued Patents All Time

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