Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicided trench contact to buried conductive layer

Silicided trench contact to buried conductive layer

US Patent 8338265 · Granted Dec 25, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fabricating photonics structure conductive pathways2025
Photonics optoelectrical system2025
Heterojunction bipolar transistors with a cut stress liner2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Method for entire removal of space truss and assistive support mechanism2025
Laterally-diffused metal-oxide-semiconductor devices with an air gap2025
Electrostatic discharge diode having dielectric isolation layer2024
Battery assembly, electronic device, and battery detection system2024
Weight measuring shovel2024
RRAM with high work function cap2024
Deep ultraviolet laser using strontium tetraborate for frequency conversion2024
Lateral bipolar transistor with emitter and collector regions including portions2024