Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Post ECP multi-step anneal/H2 treatment to reduce film impurity

Post ECP multi-step anneal/H2 treatment to reduce film impurity

US Patent 7030016 · Granted Apr 18, 2006

Estimated economic value: $2,545,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a replacement metal gate device structure2025
Method for determining parameters of three dimensional nanostructure and apparat2025
Packet routing for layer-2-based sidelink relay2025
Reliable multicast transmission with compact protocol stack2025
Modem performance enhancement via smart transmission power distribution2025
Method of logical channel prioritization to support sidelink relay2025
Lthc as charging barrier in info package formation2025
Deflector for chamber cleaning2025
Device and methods for chemical vapor deposition2025
Security mechanism for connection establishment over multi-hop sidelinks2025
Info structure with copper pillar having reversed profile2025
Semiconductor device and method of forming the same2025