Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective silicon-on-insulator isolation structure and method

Selective silicon-on-insulator isolation structure and method

US Patent 6936522 · Granted Aug 30, 2005

Estimated economic value: $6,623,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for optimizing through silicon via overlay2025
Two-color self-aligned double patterning (SADP) to yield static random access me2025
Ion beam sputtering with ion assisted deposition for coatings on chamber compone2025
System and method for determining post bonding overlay2025
System and method for mitigating overlay distortion patterns caused by a wafer b2024
Two-color self-aligned double patterning (SADP) to yield static random access me2024
SRAM design to facilitate single fin cut in double sidewall image transfer proce2024
System and method for determining post bonding overlay2023
System and method for mitigating overlay distortion patterns caused by a wafer b2023
Two-color self-aligned double patterning (SADP) to yield static random access me2023
Ion beam sputtering with ion assisted deposition for coatings on chamber compone2023
Ion beam sputtering with ion assisted deposition for coatings on chamber compone2023