Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same

Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same

US Patent 6352885 · Granted Mar 5, 2002

Estimated economic value: $11,927,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Variable-speed drive for single-phase asynchronous motors2025
Method of forming a field effect transistor2013
Enhancing transistor characteristics by a late deep implantation in combination 2012
Technique for providing stress sources in transistors in close proximity to a ch2012
Drive current adjustment for transistors by local gate engineering2012
Drive current adjustment for transistors by local gate engineering2012
Semiconductor device comprising isolation trenches inducing different types of s2012
Method of enhancing lithography capabilities during gate formation in semiconduc2012
Etch stop layer of reduced thickness for patterning a dielectric material in a c2012
Etch stop layer of reduced thickness for patterning a dielectric material in a c2012
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge ma2011
Method for reducing defects of gate of CMOS devices during cleaning processes by2011