Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching

Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching

US Patent 5976986 · Granted Nov 2, 1999

Estimated economic value: $18,540,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Sheet feeder and image forming apparatus2016
Method for fabricating infrared sensors2014
Method for fabricating a metal-insulator-metal capacitor2014
Embedded DRAM memory cell with additional patterning layer for improved strap fo2014
Enhanced capacitance trench capacitor2013
Embedded DRAM memory cell with additional patterning layer for improved strap fo2013
Method of forming enhanced capacitance trench capacitor2012
Shallow trench isolation structure compatible with SOI embedded DRAM2011
Method for non-selective shallow trench isolation reactive ion etch for patterni2011
Method of fabricating semiconductor device with reduced pitch2010
Chemical vapor deposition chamber with dual frequency bias and method for manufa2010
Poly filled substrate contact on SOI structure2009