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Home › Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices

Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices

US Patent 7871893 · Granted Jan 18, 2011

Estimated economic value: $5,934,000 ⓘ

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