Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit structures having cut metal gates with dielectric spacer fill

Integrated circuit structures having cut metal gates with dielectric spacer fill

US Patent 12382721 · Granted Aug 5, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Package architecture of photonic system with vertically stacked dies having plan2025
Gate-all-around integrated circuit structures having necked feature2025
Gate aligned fin cut for advanced integrated circuit structure fabrication2025
Gate aligned fin cut for advanced integrated circuit structure fabrication2025
Gate aligned fin cut for advanced integrated circuit structure fabrication2025
Integrated circuit structures having dielectric anchor void2025
Integrated circuit structures having dielectric anchor void2025