Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD

In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD

US Patent 10643838 · Granted May 5, 2020

Estimated economic value: $58,379,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Helmet2025
Dry etching with etch byproduct self-cleaning2025
Helmet2025
Benzyl compound passivation for selective deposition and selective etch protecti2025
Enhanced etch selectivity using halides2025
Deposition of semiconductor integration films2025
Methods of selective atomic layer deposition2025
Method of depositing metal films2025
Selective metal removal with flowable polymer2025
Selective etch of a substrate2025
Selective etch of a substrate2025
Selective blocking of metal surfaces using bifunctional self-assembled monolayer2024