{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Ion-ion plasma atomic layer etch process and reactor", "item": "https://www.patentleaderboard.com/patent/10475626"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ion-ion plasma atomic layer etch process and reactor

Ion-ion plasma atomic layer etch process and reactor

US Patent 10475626 · Granted Nov 12, 2019

Estimated economic value: $41,829,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for digital control of ion energy distribution in a plasma2025
Pulsed plasma (DC/RF) deposition of high quality C films for patterning2025
Method for forming integrated circuit structures2025
Methods and apparatus for processing a substrate2025
Radio-frequency (RF) matching network for fast impedance tuning2025
Wafer to baseplate arc prevention using textured dielectric2025
Inductively coupled plasma source with radial coil network2025
Auxiliary plasma source for robust ignition and restrikes in a plasma chamber2025
Systems and methods for controlling a voltage waveform at a substrate during pla2025
Apparatus and method for controlling edge ring variation2025
Plasma chamber with multiphase rotating independent gas cross-flow with reduced 2025
Plasma chamber with multiphase rotating independent gas cross-flow with reduced 2025