{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Preserving channel strain in fin cuts", "item": "https://www.patentleaderboard.com/patent/10256238"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Preserving channel strain in fin cuts

Preserving channel strain in fin cuts

US Patent 10256238 · Granted Apr 9, 2019

Estimated economic value: $2,400,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Subtractive source drain contact for stacked devices2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Integration of nanosheets with bottom dielectric isolation and ideal diode2025
Wraparound contact with reduced distance to channel2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
FinFET gate cut after dummy gate removal2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025
Formation of trench silicide source or drain contacts without gate damage2025
Method and structure of forming sidewall contact for stacked FET2025
Stressed material within gate cut region2025
Electronic devices with a low dielectric constant2025