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Home › Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength

Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength

US Patent 10109646 · Granted Oct 23, 2018

Estimated economic value: $9,777,000 ⓘ

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