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Home › Integrating a gate-all-around (GAA) field-effect transistor(s) (FET(S)) and a finFET(s) on a common substrate of a semiconductor die

Integrating a gate-all-around (GAA) field-effect transistor(s) (FET(S)) and a finFET(s) on a common substrate of a semiconductor die

US Patent 10332881 · Granted Jun 25, 2019

Estimated economic value: $12,473,000 ⓘ

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