HI

Hiraku Ishikawa

NE Nec: 13 patents #940 of 14,502Top 7%
TL Tokyo Electron Limited: 13 patents #516 of 5,567Top 10%
Overall (All Time): #155,293 of 4,157,543Top 4%
26
Patents All Time

Issued Patents All Time

Showing 1–25 of 26 patents

Patent #TitleCo-InventorsDate
10388524 Film forming method, boron film, and film forming apparatus Hirokazu Ueda, Masahiro Oka, Yoshimasa Watanabe, Syuhei Yonezawa 2019-08-20
8936829 Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method 2015-01-20
8809207 Pattern-forming method and method for manufacturing semiconductor device Teruyuki Hayashi, Takaaki Matsuoka, Yuji Ono 2014-08-19
8741396 Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored Eiichi Nishimura 2014-06-03
8674397 Sealing film forming method, sealing film forming device, and light-emitting device Teruyuki Hayashi 2014-03-18
8461047 Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method Takaaki Matsuoka 2013-06-11
8409460 Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium Tadakazu Murai, Eisuke Morisaki 2013-04-02
8377818 Aftertreatment method for amorphous carbon film 2013-02-19
8262844 Plasma processing apparatus, plasma processing method and storage medium Yasuhiro Tobe 2012-09-11
8017519 Semiconductor device and manufacturing method thereof 2011-09-13
7842356 Substrate processing methods 2010-11-30
7658799 Plasma film-forming apparatus and plasma film-forming method 2010-02-09
6716725 Plasma processing method and semiconductor device 2004-04-06
6528410 Method for manufacturing semiconductor device Tatsuya Usami 2003-03-04
6319847 Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique 2001-11-20
6277706 Method of manufacturing isolation trenches using silicon nitride liner 2001-08-21
6239016 Multilevel interconnection in a semiconductor device and method for forming the same 2001-05-29
6157083 Fluorine doping concentrations in a multi-structure semiconductor device Tatsuya Usami 2000-12-05
6071832 Method for manufacturing a reliable semiconductor device using ECR-CVD and implanting hydrogen ions into an active region 2000-06-06
5894170 Wiring layer in semiconductor device 1999-04-13
5882975 Method of fabricating salicide-structure semiconductor device 1999-03-16
5861674 Multilevel interconnection in a semiconductor device and method for forming the same 1999-01-19
5751050 Semiconductor device having a polysilicon resistor element with increased stability and method of fabricating same Tatsuya Usami 1998-05-12
5723386 Method of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wirings 1998-03-03
5633208 Planarization of insulation film using low wettingness surface 1997-05-27