AB

Albert Bergemont

NS National Semiconductor: 124 patents #3 of 2,238Top 1%
MP Maxim Integrated Products: 17 patents #18 of 945Top 2%
SS Sgs-Thomson Microelectronics S.A.: 7 patents #109 of 957Top 15%
FO Foveonics: 6 patents #2 of 7Top 30%
Apple: 3 patents #7,422 of 18,612Top 40%
FO Foveon: 2 patents #17 of 65Top 30%
EU Eurotechnique: 1 patents #4 of 7Top 60%
QU Qorvo Us: 1 patents #255 of 457Top 60%
CC Chengdu Monolithic Power Systems Co.: 1 patents #94 of 171Top 55%
VT Virtual Silicon Technology: 1 patents #8 of 13Top 65%
📍 Palo Alto, CA: #40 of 9,675 inventorsTop 1%
🗺 California: #830 of 386,348 inventorsTop 1%
Overall (All Time): #5,150 of 4,157,543Top 1%
164
Patents All Time

Issued Patents All Time

Showing 76–100 of 164 patents

Patent #TitleCo-InventorsDate
6080601 Method for forming a bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region Min-hwa Chi 2000-06-27
6081451 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages Alexander Kalnitsky 2000-06-27
6078094 Starter current source device with automatic shut-down capability and method for its manufacture Pavel Poplevine, Alexander Kalnitsky 2000-06-20
6078211 Substrate biasing circuit that utilizes a gated diode to set the bias on the substrate Alexander Kalnitsky, Pavel Poplevine 2000-06-20
6055185 Single-poly EPROM cell with CMOS compatible programming voltages Alexander Kalnitsky 2000-04-25
6049202 Reference current generator with gated-diodes Pavel Poplevine, Alexander Kalnitsky 2000-04-11
6031275 Antifuse with a silicide layer overlying a diffusion region Alexander Kalnitsky, Pavel Poplevine 2000-02-29
6011295 Neural network active pixel cell Richard B. Merrill, Min-hwa Chi 2000-01-04
6008508 ESD Input protection using a floating gate neuron MOSFET as a tunable trigger element Min-hwa Chi 1999-12-28
5998280 Modified recessed locos isolation process for deep sub-micron device processes Alexander H. Owens 1999-12-07
5998267 Process to manufacture high density ULSI ROM array Alexander Kalnitsky 1999-12-07
5994186 Contactless flash eprom using poly silicon isolation and process of making the same 1999-11-30
5982669 EPROM and flash memory cells with source-side injection Alexander Kalnitsky, Christoph Pichler 1999-11-09
5978269 Apparatus and method for lowering the potential barrier across the source-to-well junction during the programming of non-volatile memory cells Alexander Kalnitsky, Pavel Poplevine 1999-11-02
5969406 High linearity capacitor using a damascene tungsten stud as the bottom electrode 1999-10-19
5962844 Active pixel image cell with embedded memory and pixel level signal processing capability Richard B. Merrill, Min-hwa Chi 1999-10-05
5940324 Single-poly EEPROM cell that is programmable and erasable in a low-voltage environment Min-hwa Chi 1999-08-17
5932873 Capacitor-coupled bipolar active pixel sensor with integrated electronic shutter Min-hwa Chi, Hosam Haggag, Carver A. Mead 1999-08-03
5908311 Method for forming a mixed-signal CMOS circuit that includes non-volatile memory cells Min-hwa Chi, Chih Sieh Teng 1999-06-01
5889700 High density EEPROM array using self-aligned control gate and floating gate for both access transistor and memory cell and method of operating same Min-hwa Chi 1999-03-30
5856222 Method of fabricating a high density EEPROM cell Min-hwa Chi 1999-01-05
5847422 MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data Min-hwa Chi, Lih-Ying Ching 1998-12-08
5847426 Contactless flash EPROM using poly silicon isolation 1998-12-08
5837574 Method of manufacturing a thin poly, capacitor coupled contactless imager with high resolution and wide dynamic range Carver A. Mead, Min-hwa Chi, Hosam Haggag 1998-11-17
5828102 Multiple finger polysilicon gate structure and method of making 1998-10-27