Issued Patents All Time
Showing 126–150 of 164 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5557567 | Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data | Min-hwa Chi | 1996-09-17 |
| 5552619 | Capacitor coupled contactless imager with high resolution and wide dynamic range | Carver A. Mead, Min-hwa Chi, Hosam Haggag | 1996-09-03 |
| 5512504 | Method of making a memory array with field oxide islands eliminated | Graham R. Wolstenholme, Etan Shacham | 1996-04-30 |
| 5511021 | Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction | Min-hwa Chi | 1996-04-23 |
| 5496754 | Method for preventing bit line-to-bit line leakage in the access transistor region of an AMG EPROM | Graham R. Wolstenholme | 1996-03-05 |
| 5484741 | Method of making increased-density flash EPROM that requires less area to form the metal bit line-to-drain contacts | — | 1996-01-16 |
| 5481493 | Segment-erasable flash EPROM | — | 1996-01-02 |
| 5477485 | Method for programming a single EPROM or FLASH memory cell to store multiple levels of data that utilizes a floating substrate | Min-hwa Chi | 1995-12-19 |
| 5464999 | Method for programming an alternate metal/source virtual ground flash EPROM cell array | — | 1995-11-07 |
| 5460990 | Method for fabricating a segmented AMG EPROM where only every fourth bit line contacts a select transistor in a row of segment select transistors | — | 1995-10-24 |
| 5455790 | High density EEPROM cell array which can selectively erase each byte of data in each row of the array | Michael J. Hart | 1995-10-03 |
| 5453393 | Method for forming a high density EEPROM cell array with improved access time | — | 1995-09-26 |
| 5449633 | Method for fabricating an ultra-high-density alternate metal virtual ground ROM | — | 1995-09-12 |
| 5436478 | Fast access AMG EPROM with segment select transistors which have an increased width | — | 1995-07-25 |
| 5422844 | Memory array with field oxide islands eliminated and method | Graham R. Wolstenholme, Etan Shacham | 1995-06-06 |
| 5416349 | Increased-density flash EPROM that requires less area to form the metal bit line-to-drain contacts | — | 1995-05-16 |
| 5409854 | Method for forming a virtual-ground flash EPROM array with floating gates that are self aligned to the field oxide regions of the array | — | 1995-04-25 |
| 5402372 | High density EEPROM cell array with improved access time and method of manufacture | — | 1995-03-28 |
| 5397725 | Method of controlling oxide thinning in an EPROM or flash memory array | Graham R. Wolstenholme | 1995-03-14 |
| 5397726 | Segment-erasable flash EPROM | — | 1995-03-14 |
| 5379253 | High density EEPROM cell array with novel programming scheme and method of manufacture | — | 1995-01-03 |
| 5371030 | Method of fabricating field oxide isolation for a contactless flash EPROM cell array | — | 1994-12-06 |
| 5346842 | Method of making alternate metal/source virtual ground flash EPROM cell array | — | 1994-09-13 |
| 5304503 | Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric | Euisik Yoon, Ronald P. Kovacs | 1994-04-19 |
| 5293331 | High density EEPROM cell with tunnel oxide stripe | Michael J. Hart | 1994-03-08 |