ST

Shigeki Tomishima

Mitsubishi Electric: 72 patents #58 of 25,717Top 1%
IN Intel: 46 patents #716 of 30,777Top 3%
Micron: 15 patents #1,089 of 6,345Top 20%
RT Renesas Technology: 9 patents #297 of 3,337Top 9%
ML Mitsubishi Electric Engineering Company, Limited: 6 patents #27 of 352Top 8%
TR Tahoe Research: 3 patents #2 of 215Top 1%
TI Texas Instruments: 2 patents #5,248 of 12,488Top 45%
📍 Portland, OR: #54 of 9,213 inventorsTop 1%
🗺 Oregon: #102 of 28,073 inventorsTop 1%
Overall (All Time): #6,513 of 4,157,543Top 1%
146
Patents All Time

Issued Patents All Time

Showing 76–100 of 146 patents

Patent #TitleCo-InventorsDate
6580092 Semiconductor chip, semiconductor device, and process for producing a semiconductor device 2003-06-17
6545926 Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same Tsukasa Ooishi, Hiroki Shimano, Hideto Hidaka 2003-04-08
6489796 Semiconductor device provided with boost circuit consuming less current 2002-12-03
6480946 Memory system for synchronized and high speed data transfer Masatoshi Ishikawa, Tsukasa Ooishi 2002-11-12
6470467 Synchronous semiconductor memory device capable of performing operation test at high speed while reducing burden on tester Tsukasa Ooishi 2002-10-22
6466509 Semiconductor memory device having a column select line transmitting a column select signal Hiroaki Tanizaki, Mitsutaka Niiro, Masanao Maruta, Hiroshi Kato, Masatoshi Ishikawa +3 more 2002-10-15
6438066 Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system Tsukasa Ooishi, Masatoshi Ishikawa 2002-08-20
6429495 Semiconductor device with address programming circuit Tsukasa Ooishi, Hiroki Shimano 2002-08-06
6414883 Semiconductor memory device Hideto Hidaka, Mikio Asakura, Kazuyasu Fujishima, Tsukasa Ooishi, Kazutami Arimoto +1 more 2002-07-02
6411560 Semiconductor memory device capable of reducing leakage current flowing into substrate Hiroaki Tanizaki, Mitsutaka Niiro, Masanao Maruta, Hiroshi Kato, Masatoshi Ishikawa +3 more 2002-06-25
6400632 Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall Hiroaki Tanizaki, Hideto Hidaka, Tsukasa Ooishi, Hiroshi Kato 2002-06-04
6385125 Synchronous semiconductor integrated circuit device capable of test time reduction Tsukasa Ooishi, Hiroaki Tanizaki, Yutaka Komai 2002-05-07
6384674 Semiconductor device having hierarchical power supply line structure improved in operating speed Hiroaki Tanizaki, Tsukasa Ooishi, Masatoshi Ishikawa, Hideto Hidaka, Takaharu Tsuji 2002-05-07
6377508 Dynamic semiconductor memory device having excellent charge retention characteristics Kazutami Arimoto 2002-04-23
6373315 Signal potential conversion circuit Takaharu Tsuji, Tsukasa Ooishi 2002-04-16
6333869 Semiconductor memory device with readily changeable memory capacity Hiroaki Tanizaki 2001-12-25
6331956 Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access Tsukasa Ooishi, Hiroki Shimano 2001-12-18
6327195 Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same Tsukasa Ooishi, Hiroki Shimano 2001-12-04
6314042 Fast accessible semiconductor memory device Tsukasa Ooishi, Hiroshi Kato 2001-11-06
6310815 Multi-bank semiconductor memory device suitable for integration with logic Tadato Yamagata, Akira Yamazaki, Yoshio Yukinari, Makoto Hatakenaka, Atsushi Miyanishi 2001-10-30
6301187 Synchronous type semiconductor memory device permitting reduction in ratio of area occupied by control circuit in chip area Tsukasa Ooishi 2001-10-09
6288601 Boosted potential generating circuit 2001-09-11
6272055 Semiconductor memory device Hideto Hidaka, Mikio Asakura, Kazuyasu Fujishima, Tsukasa Ooishi, Kazutami Arimoto +1 more 2001-08-07
6198679 Semiconductor memory device Teruhiko Nakasu, Tsukasa Ooishi 2001-03-06
6178122 Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same Tsukasa Ooishi, Hiroki Shimano 2001-01-23