Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5888851 | Method of manufacturing a semiconductor device having a circuit portion and redundant circuit portion coupled through a meltable connection | Kaoru Motonami | 1999-03-30 |
| 5323343 | DRAM device comprising a stacked type capacitor and a method of manufacturing thereof | Ikuo Ogoh | 1994-06-21 |
| 5300444 | Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film | Atsushi Hachisuka, Ikuo Ogoh, Hideki Genjou, Yoshinori Okumura, Takayuki Matsukawa | 1994-04-05 |
| 5241212 | Semiconductor device having a redundant circuit portion and a manufacturing method of the same | Kaoru Motonami | 1993-08-31 |
| 5164806 | Element isolating structure of semiconductor device suitable for high density integration | Hiroki Shimano, Tomonori Okudaira, Yoshinori Okumura | 1992-11-17 |
| 5153689 | Semiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word lines | Yoshinori Okumura, Takayuki Matsukawa, Ikuo Ogoh, Hideki Genjo, Atsushi Hachisuka | 1992-10-06 |
| 5112771 | Method of fibricating a semiconductor device having a trench | Tatsuya Ishii, Yoji Mashiko, Michihiro Yamada | 1992-05-12 |
| 5047359 | Method of implanting into the sidewall of a trench by rotating the wafer | — | 1991-09-10 |
| 4985368 | Method for making semiconductor device with no stress generated at the trench corner portion | Tatsuya Ishii, Yoshinori Okumura | 1991-01-15 |
| 4984055 | Semiconductor device having a plurality of conductive layers and manufacturing method therefor | Yoshinori Okumura, Atsuhiro Fujii, Hiroji Ozaki, Wataru Wakamiya, Takayuki Matsukawa | 1991-01-08 |
| 4956692 | Semiconductor device having an isolation oxide film | Hiroji Ozaki, Masahiro Yoneda, Ikuo Ogoh, Yoshinori Okumura, Wataru Wakamiya | 1990-09-11 |
| 4956310 | Semiconductor memory device and fabricating method thereof | Akira Tokui, Shinichi Sato, Akira Kawai, Masayuki Nakajima, Hiroji Ozaki | 1990-09-11 |
| 4905068 | Semiconductor device having interconnection layers of T-shape cross section | Shinichi Satoh, Makoto Hirayama, Ikuo Ogoh, Yoshikazu Ohno, Masato Fujinaga | 1990-02-27 |
| 4894695 | Semiconductor device with no stress generated at the trench corner portion and the method for making the same | Tatsuya Ishii, Yoshinori Okumura | 1990-01-16 |
| 4763182 | Semiconductor memory device with deep bit-line channel stopper | Hiroji Ozaki, Shinichi Sato, Akira Tokui, Akira Kawai, Masayuki Nakajima | 1988-08-09 |
| 4702796 | Method for fabricting a semiconductor device | Masayuki Nakajima, Shinichi Sato, Akira Tokui, Akira Kawai, Hiroji Ozaki | 1987-10-27 |
| 4341616 | Dry etching device | Haruhiko Abe, Kazuo Mizuguchi | 1982-07-27 |
| 4333226 | Method of forming patterned refractory metal films by selective oxygen implant and sublimation | Haruhiko Abe, Natsuro Tsubouchi, Hiroshi Harada, Junichi Mitsuhashi | 1982-06-08 |