Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5930614 | Method for forming MOS device having field shield isolation | Takahisa Eimori, Shinichi Satoh, Hiroji Ozaki, Yoshinori Tanaka | 1999-07-27 |
| 5521419 | Semiconductor device having field shield element isolating structure and method of manufacturing the same | Shinichi Satoh, Hiroji Ozaki, Takahisa Eimori, Yoshinori Tanaka | 1996-05-28 |
| 5459344 | Stacked capacitor type semiconductor memory device and manufacturing method thereof | Yoshinori Tanaka, Takahisa Eimori, Hiroji Ozaki, Hiroshi Kimura, Shinichi Satoh | 1995-10-17 |
| 5290729 | Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof | Yoshio Hayashide | 1994-03-01 |
| 5288661 | Semiconductor device having bonding pad comprising buffer layer | Shinichi Satoh, Hiroji Ozaki, Hiroshi Kimura, Yoshinori Tanaka | 1994-02-22 |
| 5278437 | Stacked capacitor type semiconductor memory device and manufacturing method thereof | Yoshinori Tanaka, Takahisa Eimori, Hiroji Ozaki, Hiroshi Kimura, Shinichi Satoh | 1994-01-11 |
| 5225704 | Field shield isolation structure for semiconductor memory device and method for manufacturing the same | Shinichi Satoh, Hiroji Ozaki, Takahisa Eimori, Yoshinori Tanaka | 1993-07-06 |
| 5180683 | Method of manufacturing stacked capacitor type semiconductor memory device | Yoshinori Tanaka, Takahisa Eimori, Hiroji Ozaki, Hiroshi Kimura, Shinichi Satoh | 1993-01-19 |
| 5181094 | Complementary semiconductor device having improved device isolating region | Takahisa Eimori, Hiroji Ozaki, Yoshinori Tanaka, Shinichi Satoh | 1993-01-19 |
| 5177571 | LDD MOSFET with particularly shaped gate electrode immune to hot electron effect | Shinichi Satoh, Takahisa Eimori, Hiroji Ozaki, Yoshinori Tanaka | 1993-01-05 |
| 5164803 | CMOS semiconductor device with an element isolating field shield | Hiroji Ozaki, Shinichi Satoh, Takahisa Eimori, Yoshinori Tanaka | 1992-11-17 |
| 5101251 | Semiconductor memory device with improved stacked capacitor structure | Ikuo Ogoh | 1992-03-31 |
| 5097310 | Complementary semiconductor device having improved device isolating region | Takahisa Eimori, Hiroji Ozaki, Yoshinori Tanaka, Shinichi Satoh | 1992-03-17 |
| 5094965 | Field effect transistor having substantially coplanar surface structure and a manufacturing method therefor | Hiroji Ozaki, Takahisa Eimori, Yoshinori Tanaka, Shinichi Satoh | 1992-03-10 |
| 5084752 | Semiconductor device having bonding pad comprising buffer layer | Shinichi Satoh, Hiroji Ozaki, Hiroshi Kimura, Yoshinori Tanaka | 1992-01-28 |
| 5067000 | Semiconductor device having field shield isolation | Takahisa Eimori, Shinichi Satoh, Hiroji Ozaki, Yoshinori Tanaka | 1991-11-19 |
| 5047817 | Stacked capacitor for semiconductor memory device | Yoshinori Tanaka, Takahisa Eimori, Hiroji Ozaki, Hiroshi Kimura, Shinichi Satoh | 1991-09-10 |
| 4998161 | LDD MOS device having an element separation region having an electrostatic screening electrode | Hiroshi Kimura, Shinichi Satoh, Hiroji Ozaki, Yoshinori Tanaka | 1991-03-05 |
| 4994893 | Field effect transistor substantially coplanar surface structure | Hiroji Ozaki, Takahisa Eimori, Yoshinori Tanaka, Shinichi Satoh | 1991-02-19 |
| 4984055 | Semiconductor device having a plurality of conductive layers and manufacturing method therefor | Yoshinori Okumura, Atsuhiro Fujii, Masao Nagatomo, Hiroji Ozaki, Takayuki Matsukawa | 1991-01-08 |
| 4956692 | Semiconductor device having an isolation oxide film | Hiroji Ozaki, Masahiro Yoneda, Ikuo Ogoh, Yoshinori Okumura, Masao Nagatomo | 1990-09-11 |
| 4381595 | Process for preparing multilayer interconnection | Masahiko Denda, Shinichi Sato, Hiroshi Harada, Natsuro Tsubouchi, Hirokazu Miyoshi | 1983-05-03 |