| 12431198 |
Charge loss acceleration during programming of memory cells in a memory sub-system |
Lawrence Celso Miranda, Zhengyi Zhang |
2025-09-30 |
| 12347485 |
Establishing bitline, wordline and boost voltages to manage a maximum program voltage level during all levels programming of a memory device |
Lawrence Celso Miranda, Jeffrey S. McNeil, Tomoko Ogura Iwasaki |
2025-07-01 |
| 12260914 |
Level shifting in all levels programming of a memory device in a memory sub-system |
Lawrence Celso Miranda |
2025-03-25 |
| 12254927 |
In-line programming adjustment of a memory cell in a memory sub-system |
Lawrence Celso Miranda, Zhengyi Zhang, Tomoko Ogura Iwasaki |
2025-03-18 |
| 12224012 |
All level coarse/fine programming of memory cells |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki, Jeffrey S. McNeil |
2025-02-11 |
| 12211552 |
Concurrent slow-fast memory cell programming |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki, Jeffrey S. McNeil |
2025-01-28 |
| 12141445 |
Managing dielectric stress of a memory device using controlled ramping slopes |
Lawrence Celso Miranda |
2024-11-12 |
| 12112819 |
Apparatus for determining memory cell data states |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki, Ting Luo, Luyen Vu |
2024-10-08 |
| 12014778 |
In-line programming adjustment of a memory cell in a memory sub-system |
Lawrence Celso Miranda, Zhengyi Zhang, Tomoko Ogura Iwasaki |
2024-06-18 |
| 11961566 |
Fast bit erase for upper tail tightening of threshold voltage distributions |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki |
2024-04-16 |
| 11915758 |
Memory devices with four data line bias levels |
Hao Thai Nguyen, Tomoko Ogura Iwasaki, Erwin E. Yu, Dheeraj Srinivasan, Lawrence Celso Miranda +2 more |
2024-02-27 |
| 11887668 |
All levels programming of a memory device in a memory sub-system |
Lawrence Celso Miranda |
2024-01-30 |
| 11798647 |
Apparatus and methods for determining memory cell data states |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki, Ting Luo, Luyen Vu |
2023-10-24 |
| 11749346 |
Overwrite mode in memory programming operations |
Tomoko Ogura Iwasaki, Kulachet Tanpairoj, Jianmin Huang, Lawrence Celso Miranda |
2023-09-05 |
| 11742036 |
Reducing maximum programming voltage in memory programming operations |
Lawrence Celso Miranda, Tomoko Ogura Iwasaki |
2023-08-29 |
| 11664079 |
Intervallic dynamic start voltage and program verify sampling in a memory sub-system |
Lawrence Celso Miranda, Eric N. Lee, Tong Liu, Cobie B. Loper, Ugo Russo |
2023-05-30 |
| 11562791 |
Memory devices with four data line bias levels |
Hao Thai Nguyen, Tomoko Ogura Iwasaki, Erwin E. Yu, Dheeraj Srinivasan, Lawrence Celso Miranda +2 more |
2023-01-24 |
| 11494084 |
Managing dielectric stress of a memory device using controlled ramping slopes |
Lawrence Celso Miranda |
2022-11-08 |
| 11462281 |
Intervallic dynamic start voltage and program verify sampling in a memory sub-system |
Lawrence Celso Miranda, Eric N. Lee, Tong Liu, Cobie B. Loper, Ugo Russo |
2022-10-04 |
| 11037624 |
Devices for programming resistive change elements in resistive change element arrays |
Jia Luo, Lee Cleveland |
2021-06-15 |
| 10825516 |
Resistive change element cells sharing selection devices |
Jia Luo, Shiang-Meei Heh |
2020-11-03 |
| 10446228 |
Devices and methods for programming resistive change elements |
Jia Luo, Lee Cleveland |
2019-10-15 |
| 10387244 |
Methods for error correction with resistive change element arrays |
— |
2019-08-20 |
| 10261861 |
Methods for error correction with resistive change element arrays |
— |
2019-04-16 |
