Issued Patents All Time
Showing 101–125 of 237 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11127745 | Devices, methods of forming a device, and memory devices | Kentaro Ishii, Yongjun Jeff Hu, Amirhasan Nourbakhsh, Christopher W. Petz, Luca Fumagalli | 2021-09-21 |
| 11121177 | Memory arrays and methods of forming an array of memory cells | Scott E. Sills | 2021-09-14 |
| 11107817 | Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies | Kamal M. Karda, Yi Fang Lee, Haitao Liu, Ramanathan Gandhi, Karthik Sarpatwari +2 more | 2021-08-31 |
| 11107724 | Methods of forming integrated assemblies | — | 2021-08-31 |
| 11101271 | Array of cross point memory cells and methods of forming an array of cross point memory cells | — | 2021-08-24 |
| 11101274 | Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor | Clement Jacob, Vassil Antonov, Jaydeb Goswami, Albert Liao, Christopher W. Petz | 2021-08-24 |
| 11068166 | Hybrid memory device using different types of capacitors and operating method thereof | Kevin J. Ryan, Kirk D. Prall, Robert Quinn | 2021-07-20 |
| 11063054 | Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors | Ashonita A. Chavan | 2021-07-13 |
| 11049804 | Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays | — | 2021-06-29 |
| 11043260 | Single word line gain cell with complementary read write channel | Kamal M. Karda, Haitao Liu, Karthik Sarpatwari | 2021-06-22 |
| 11043502 | Semiconductor devices including ferroelectric materials | Qian Tao, Matthew N. Rocklein, Beth R. Cook | 2021-06-22 |
| 11037942 | Memory cell and an array of memory cells | Wayne Kinney, Marco-Domenico Tiburzi | 2021-06-15 |
| 11011529 | Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array comprising memory cells individually comprising a transistor and a capacitor | — | 2021-05-18 |
| 10998440 | Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems | Kamal M. Karda, Ramanathan Gandhi, Hong Li, Haitao Liu, Sanh D. Tang +1 more | 2021-05-04 |
| 10998338 | Integrated assemblies having ferroelectric transistors with heterostructure active regions | Kamal M. Karda, Haitao Liu | 2021-05-04 |
| 10991427 | Memory programming methods and memory systems | Jonathan J. Strand, Adam Johnson, Xiaonan Chen | 2021-04-27 |
| 10978128 | Memory cell imprint avoidance | Alessandro Calderoni, Kirk D. Prall, Ferdinando Bedeschi | 2021-04-13 |
| 10943986 | Transistors, memory cells and semiconductor constructions comprising ferroelectric gate dielectric | Kirk D. Prall, Wayne Kinney | 2021-03-09 |
| 10943953 | Semiconductor devices, hybrid transistors, and related methods | Kamal M. Karda, Haitao Liu | 2021-03-09 |
| 10937911 | Method of forming a transistor | — | 2021-03-02 |
| 10923657 | Methods of forming memory cells and memory devices | Tsz W. Chan, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer | 2021-02-16 |
| 10923658 | Memory cells and methods of forming memory cells | Shuichiro Yasuda, Noel Rocklein, Scott E. Sills, Qian Tao | 2021-02-16 |
| 10903218 | Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices | Alessandro Calderoni, Beth R. Cook, Ashonita A. Chavan | 2021-01-26 |
| 10903122 | Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors | — | 2021-01-26 |
| 10892264 | Memory device having 2-transistor vertical memory cell | Srinivas Pulugurtha | 2021-01-12 |