| 12507395 |
Doped titanium nitride materials for dram capacitors, and related semiconductor devices |
Matthew N. Rocklein, Paul A. Paduano, Sanket S. Kelkar, Christopher W. Petz, Zhiqiang Song +1 more |
2025-12-23 |
|
| 12432928 |
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry |
Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more |
2025-09-30 |
|
| 12191354 |
Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween |
Manuj Nahar, Kamal M. Karda, Michael Mutch, Hung-Wei Liu, Jeffery B. Hull |
2025-01-07 |
|
| 11871582 |
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry |
Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more |
2024-01-09 |
$10,439,000 |
| 11825662 |
Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor |
Clement Jacob, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy |
2023-11-21 |
$23,209,000 |
| 11417730 |
Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions |
Manuj Nahar, Kamal M. Karda, Michael Mutch, Hung-Wei Liu, Jeffery B. Hull |
2022-08-16 |
$9,745,000 |
| 11289487 |
Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods |
Matthew N. Rocklein, Paul A. Paduano, Sanket S. Kelkar, Christopher W. Petz, Zhe Song +1 more |
2022-03-29 |
$22,466,000 |
| 11264395 |
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry |
Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more |
2022-03-01 |
$21,169,000 |
| 11101274 |
Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor |
Clement Jacob, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy |
2021-08-24 |
$18,763,000 |
| 10923593 |
Transistor and methods of forming transistors |
Manuj Nahar, Darwin Franseda Fan, Ali Moballegh |
2021-02-16 |
$25,890,000 |
| 10553673 |
Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor |
Manuj Nahar |
2020-02-04 |
$21,371,000 |
| 10008381 |
Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide |
Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson |
2018-06-26 |
$32,156,000 |
| 9887083 |
Methods of forming capacitors |
Vishwanath Bhat |
2018-02-06 |
$50,568,000 |
| 9466660 |
Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures |
Matthew N. Rocklein, Kotha Sai Madhukar Reddy, Vishwanath Bhat |
2016-10-11 |
$11,335,000 |
| 9236427 |
Multi-material structures and capacitor-containing semiconductor constructions |
Joseph Neil Greeley, Duane M. Goodner, Vishwanath Bhat, Prashant Raghu |
2016-01-12 |
$5,575,000 |
| 9209013 |
Constructions comprising thermally conductive stacks containing rutile-type titanium oxide |
Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson |
2015-12-08 |
$8,863,000 |
| 9159551 |
Methods of forming capacitors |
Vishwanath Bhat |
2015-10-13 |
$7,358,000 |
| 9159731 |
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material |
Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson |
2015-10-13 |
$7,358,000 |
| 8940388 |
Insulative elements |
Jennifer K. Sigman, Vishwanath Bhat, Matthew N. Rocklein, Bhaskar Srinivasan, Chris M. Carlson |
2015-01-27 |
$26,039,000 |
| 8936991 |
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material |
Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson |
2015-01-20 |
$20,727,000 |
| 8927441 |
Methods of forming rutile titanium dioxide |
Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson |
2015-01-06 |
$15,780,000 |
| 8900992 |
Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems |
Vishwanath Bhat, Dan Gealy |
2014-12-02 |
$20,746,000 |
| 8865544 |
Methods of forming capacitors |
Joseph Neil Greeley, Duane M. Goodner, Vishwanath Bhat, Prashant Raghu |
2014-10-21 |
$19,042,000 |
| 8841747 |
Capacitor structure with metal bilayer and method for using the same |
Vishwanath Bhat, Chris M. Carlson |
2014-09-23 |
|
| 8748283 |
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material |
Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson |
2014-06-10 |
$11,699,000 |
