VA

Vassil Antonov

Micron: 33 patents #574 of 6,345Top 10%
NT Nanya Technology: 2 patents #292 of 775Top 40%
Overall (All Time): #95,281 of 4,157,543Top 3%
35
Patents All Time

Issued Patents All Time

Showing 25 most recent of 35 patents

Patent #TitleCo-InventorsDate
12432928 Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more 2025-09-30
12191354 Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween Manuj Nahar, Kamal M. Karda, Michael Mutch, Hung-Wei Liu, Jeffery B. Hull 2025-01-07
11871582 Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more 2024-01-09
11825662 Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor Clement Jacob, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy 2023-11-21
11417730 Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions Manuj Nahar, Kamal M. Karda, Michael Mutch, Hung-Wei Liu, Jeffery B. Hull 2022-08-16
11289487 Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods Matthew N. Rocklein, Paul A. Paduano, Sanket S. Kelkar, Christopher W. Petz, Zhe Song +1 more 2022-03-29
11264395 Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry Hung-Wei Liu, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar +5 more 2022-03-01
11101274 Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor Clement Jacob, Jaydeb Goswami, Albert Liao, Christopher W. Petz, Durai Vishak Nirmal Ramaswamy 2021-08-24
10923593 Transistor and methods of forming transistors Manuj Nahar, Darwin Franseda Fan, Ali Moballegh 2021-02-16
10553673 Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor Manuj Nahar 2020-02-04
10008381 Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson 2018-06-26
9887083 Methods of forming capacitors Vishwanath Bhat 2018-02-06
9466660 Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures Matthew N. Rocklein, Kotha Sai Madhukar Reddy, Vishwanath Bhat 2016-10-11
9236427 Multi-material structures and capacitor-containing semiconductor constructions Joseph Neil Greeley, Duane M. Goodner, Vishwanath Bhat, Prashant Raghu 2016-01-12
9209013 Constructions comprising thermally conductive stacks containing rutile-type titanium oxide Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson 2015-12-08
9159551 Methods of forming capacitors Vishwanath Bhat 2015-10-13
9159731 Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson 2015-10-13
8940388 Insulative elements Jennifer K. Sigman, Vishwanath Bhat, Matthew N. Rocklein, Bhaskar Srinivasan, Chris M. Carlson 2015-01-27
8936991 Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson 2015-01-20
8927441 Methods of forming rutile titanium dioxide Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson 2015-01-06
8900992 Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems Vishwanath Bhat, Dan Gealy 2014-12-02
8865544 Methods of forming capacitors Joseph Neil Greeley, Duane M. Goodner, Vishwanath Bhat, Prashant Raghu 2014-10-21
8841747 Capacitor structure with metal bilayer and method for using the same Vishwanath Bhat, Chris M. Carlson 2014-09-23
8748283 Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material Tsai-Yu Huang, Vishwanath Bhat, Chun-I Hsieh, Chris M. Carlson 2014-06-10
8659869 Method for forming rutile titanium oxide and the stacking structure thereof Chun-I Hsieh, Vishwanath Bhat, Jennifer K. Sigman, Wei-Hui Hsu 2014-02-25