Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

US Patent 9466660 · Granted Oct 11, 2016

Estimated economic value: $11,335,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Doped titanium nitride materials for dram capacitors, and related semiconductor 2025
Doped titanium nitride materials for dram capacitors, and related semiconductor 2025
Vertical transistor, integrated circuitry, method of forming a vertical transist2025
Vertical transistors having at least 50% grain boundaries offset between top and2025
Capacitors with electrodes having a portion of material removed, and related sem2025
Semiconductor devices including ferroelectric materials2024
Dielectric materials, capacitors and memory arrays2024
Electrode formation2024
Vertical transistor, integrated circuitry, method of forming a vertical transist2024
Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric 2023
Carry handle anchor system2023
Integrated assemblies comprising stud-type capacitors2022