Issued Patents All Time
Showing 51–75 of 237 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11735416 | Electronic devices comprising crystalline materials and related memory devices and systems | Ashonita A. Chavan, Michael Mutch, Sameer Chhajed | 2023-08-22 |
| 11727983 | Single word line gain cell with complementary read write channel | Kamal M. Karda, Haitao Liu, Karthik Sarpatwari | 2023-08-15 |
| 11715797 | Ferroelectric transistors and assemblies comprising ferroelectric transistors | Kamal M. Karda, Haitao Liu | 2023-08-01 |
| 11711924 | Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devices | Alessandro Calderoni, Beth R. Cook, Ashonita A. Chavan | 2023-07-25 |
| 11710513 | Integrated assemblies having ferroelectric transistors and methods of forming integrated assemblies | Kamal M. Karda | 2023-07-25 |
| 11706929 | Memory cells | Kamal M. Karda, Qian Tao, Haitao Liu, Kirk D. Prall, Ashonita A. Chavan | 2023-07-18 |
| 11695077 | Memory cell comprising a transistor that comprises a pair of insulator-material regions and an array of transistors | — | 2023-07-04 |
| 11688450 | Memory device having 2-transistor vertical memory cell and shield structures | Kamal M. Karda, Haitao Liu, Karthik Sarpatwari, Alessandro Calderoni, Richard E. Fackenthal +1 more | 2023-06-27 |
| 11676768 | Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices | Ashonita A. Chavan, Beth R. Cook, Manuj Nahar | 2023-06-13 |
| 11665880 | Memory device having 2-transistor vertical memory cell and a common plate | Kamal M. Karda, Karthik Sarpatwari, Haitao Liu | 2023-05-30 |
| 11658246 | Devices including vertical transistors, and related methods and electronic systems | Kamal M. Karda, Ramanathan Gandhi, Yi Fang Lee, Haitao Liu, Scott E. Sills | 2023-05-23 |
| 11653489 | Memory device having 2-transistor vertical memory cell and shield structures | Kamal M. Karda, Haitao Liu, Karthik Sarpatwari | 2023-05-16 |
| 11631453 | Vertical 3D single word line gain cell with shared read/write bit line | Kamal M. Karda, Haitao Liu, Karthik Sarpatwari | 2023-04-18 |
| 11616073 | Memory device having 2-transistor vertical memory cell and wrapped data line structure | Kamal M. Karda, Eric Carman, Karthik Sarpatwari, Richard E. Fackenthal, Haitao Liu | 2023-03-28 |
| 11605723 | Transistors and memory arrays | Scott E. Sills | 2023-03-14 |
| 11600691 | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances | Muralikrishnan Balakrishnan, Beth R. Cook | 2023-03-07 |
| 11594611 | Transistors, memory cells and semiconductor constructions | Kirk D. Prall, Wayne Kinney | 2023-02-28 |
| 11581319 | Memory device having 2-transistor vertical memory cell | Srinivas Pulugurtha | 2023-02-14 |
| 11552086 | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material | Ashonita A. Chavan, Manuj Nahar | 2023-01-10 |
| 11552198 | Transistors comprising at least one of GaP, GaN, and GaAs | — | 2023-01-10 |
| 11545492 | Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors | — | 2023-01-03 |
| 11515417 | Transistors including heterogeneous channels | Scott E. Sills, Ramanathan Gandhi, Yi Fang Lee, Kamal M. Karda | 2022-11-29 |
| 11501817 | Memory cell imprint avoidance | Alessandro Calderoni, Kirk D. Prall, Ferdinando Bedeschi | 2022-11-15 |
| 11476252 | Memory device having 2-transistor vertical memory cell and shared channel region | Karthik Sarpatwari, Kamal M. Karda, Haitao Liu | 2022-10-18 |
| 11476259 | Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems | Kamal M. Karda, Ramanathan Gandhi, Hong Li, Haitao Liu, Sanh D. Tang +1 more | 2022-10-18 |