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Corrado Villa — 79 Patents

Micron: 47 patents #391 of 6,345Top 7%
SSSgs-Thomson Microelectronics S.A.: 16 patents #33 of 957Top 4%
SSStmicroelectronics Sa: 11 patents #388 of 4,662Top 9%
FGFerroelectric Memory Gmbh: 1 patents #11 of 17Top 65%
Macherio, IT: #3 of 22 inventorsTop 15%
Overall (All Time): #23,121 of 4,157,543Top 1%
79 Patents All Time

Issued Patents All Time

Showing 51–75 of 79 patents

Patent #TitleCo-InventorsDate
7646644 Nonvolatile memory device with multiple references and corresponding control method Efrem Bolandrina, Daniele Vimercati 2010-01-12
7567107 Reduction of the time for executing an externally commanded transfer of data in an integrated device Daniele Vimercati, Stefan Frederik Schippers, Yuri Zambelli 2009-07-28
7154803 Redundancy scheme for a memory integrated circuit Andrea Martinelli, Daniele Balluchi 2006-12-26
7149844 Non-volatile memory device Oreste Bernardi, Marco Redaelli 2006-12-12
7023738 Full-swing wordline driving circuit Daniele Vimercati, Stefan Frederik Schippers, Graziano Mirichigni 2006-04-04
6483750 Flash EEPROM with on-chip erase source voltage generator Marco Dallabora, Luigi Bettini 2002-11-19
6195291 Flash EEPROM with on-chip erase source voltage generator Marco Dallabora, Luigi Bettini 2001-02-27
6195290 Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage device Marco Dallabora, Simone Bartoli, Marco Defendi 2001-02-27
6055187 Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells Marco Dallabora, Andrea Ghilardelli 2000-04-25
6040734 Supply voltages switch circuit Luigi Bettini, Simone Bartoli 2000-03-21
5999450 Electrically erasable and programmable non-volatile memory device with testable redundancy circuits Marco Dallabora, Marco Defendi 1999-12-07
5999456 Flash EEPROM with controlled discharge time of the word lines and source potentials after erase Mauro Sali, Marcello Carrera 1999-12-07
5920505 Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices Mauro Sali, Marcello Carrera 1999-07-06
5917753 Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells Marco Dallabora, Andrea Ghilardelli 1999-06-29
5886949 Method and circuit for generating a synchronizing ATD signal Marco Defendi, Luigi Bettini 1999-03-23
5854764 Sectorized electrically erasable and programmable non-volatile memory device with redundancy Marco Dallabora, Fabio Tassan Caser 1998-12-29
5822247 Device for generating and regulating a gate voltage in a non-volatile memory Fabio Tassan Caser, Simone Bartoli 1998-10-13
5818763 Erasing method for a non-volatile memory Marco Defendi, Luigi Bettini 1998-10-06
5784319 Method for erasing an electrically programmable and erasable non-volatile memory cell Roberto Bez, Daniele Cantarelli, Marco Dallabora 1998-07-21
5724290 Method and programming device for detecting an error in a memory Mauro Sali, Marcello Cane 1998-03-03
5721707 Erase voltage control circuit for an electrically erasable non-volatile memory cell Marco Dallabora, Marcello Cane 1998-02-24
5719807 Flash EEPROM with controlled discharge time of the word lines and source potentials after erase Mauro Sali, Marcello Carrera 1998-02-17
5659502 Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices Mauro Sali, Marcello Carrera 1997-08-19
5638327 Flash-EEPROM memory array and method for biasing the same Marco Dallabora, Mauro Sali, Fabio Tassan Caser 1997-06-10
RE35121 Regulation of the output voltage of a voltage multiplier Marco Olivo, Luigi Pascucci 1995-12-12