Issued Patents All Time
Showing 51–75 of 129 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7588994 | Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld | 2009-09-15 |
| 7566606 | Methods of fabricating semiconductor devices having strained dual channel layers | Matthew T. Currie, Anthony J. Lochtefeld, Christopher Leitz | 2009-07-28 |
| 7535089 | Monolithically integrated light emitting devices | — | 2009-05-19 |
| 7501351 | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits | — | 2009-03-10 |
| 7495266 | Strained silicon-on-silicon by wafer bonding and layer transfer | David Isaacson | 2009-02-24 |
| 7465619 | Methods of fabricating dual layer semiconductor devices | — | 2008-12-16 |
| 7420201 | Strained-semiconductor-on-insulator device structures with elevated source/drain regions | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld | 2008-09-02 |
| 7414259 | Strained germanium-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld | 2008-08-19 |
| 7390701 | Method of forming a digitalized semiconductor structure | Zhiyuan Cheng, Dimitri Antoniadis | 2008-06-24 |
| 7348259 | Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers | Zhiyuan Cheng, Dimitri Antoniadis | 2008-03-25 |
| 7304336 | FinFET structure and method to make the same | Zhiyuan Cheng, Dimitri Antoniadis | 2007-12-04 |
| 7301180 | Structure and method for a high-speed semiconductor device having a Ge channel layer | Minjoo L. Lee, Christopher Leitz | 2007-11-27 |
| 7297612 | Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld | 2007-11-20 |
| 7259388 | Strained-semiconductor-on-insulator device structures | Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld | 2007-08-21 |
| 7259108 | Methods for fabricating strained layers on semiconductor substrates | Matthew T. Currie | 2007-08-21 |
| 7256142 | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits | — | 2007-08-14 |
| 7250359 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization | — | 2007-07-31 |
| 7227176 | Etch stop layer system | Kenneth Chai-en Wu, Gianni Taraschi, Jeffrey T. Borenstein | 2007-06-05 |
| 7217668 | Gate technology for strained surface channel and strained buried channel MOSFET devices | Richard Hammond, Matthew T. Currie | 2007-05-15 |
| 7202124 | Strained gettering layers for semiconductor processes | Arthur J. Pitera | 2007-04-10 |
| 7180648 | Electro-absorption modulator device and methods for fabricating the same | Carl Dohrman, Saurabh Gupta | 2007-02-20 |
| 7141820 | Structures with planar strained layers | Minjoo L. Lee, Christopher Leitz | 2006-11-28 |
| 7138310 | Semiconductor devices having strained dual channel layers | Matthew T. Currie, Anthony J. Lochtefeld, Christopher Leitz | 2006-11-21 |
| 7138649 | Dual-channel CMOS transistors with differentially strained channels | Matthew T. Currie, Anthony J. Lochtefeld | 2006-11-21 |
| 7109516 | Strained-semiconductor-on-insulator finFET device structures | Thomas A. Langdo, Matthew T. Currie, Glyn Braithwaite, Richard Hammond, Anthony J. Lochtefeld | 2006-09-19 |