EF

Eugene A. Fitzgerald

MIT: 53 patents #26 of 9,367Top 1%
AS Amberwave Systems: 41 patents #2 of 20Top 10%
TSMC: 24 patents #1,420 of 12,232Top 15%
NU Nanyang Technological University: 10 patents #9 of 1,285Top 1%
AT AT&T: 5 patents #3,608 of 18,772Top 20%
NS National University Of Singapore: 4 patents #72 of 1,623Top 5%
CF Cornell Research Foundation: 2 patents #418 of 1,638Top 30%
DL Draper Laboratory: 1 patents #495 of 921Top 55%
📍 Windham, NH: #1 of 335 inventorsTop 1%
🗺 New Hampshire: #22 of 12,181 inventorsTop 1%
Overall (All Time): #8,528 of 4,157,543Top 1%
129
Patents All Time

Issued Patents All Time

Showing 26–50 of 129 patents

Patent #TitleCo-InventorsDate
9178095 High-efficiency solar-cell arrays with integrated devices and methods for forming them John J. Hennessy, Andrew C. Malonis, Arthur J. Pitera, Steven A. Ringel 2015-11-03
9064930 Methods for forming semiconductor device structures Thomas A. Langdo, Anthony J. Lochtefeld, Richard Hammond, Matthew T. Currie 2015-06-23
8822282 Methods of fabricating contact regions for FET incorporating SiGe 2014-09-02
8748292 Methods of forming strained-semiconductor-on-insulator device structures Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld 2014-06-10
8722495 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2014-05-13
8604330 High-efficiency solar-cell arrays with integrated devices and methods for forming them John J. Hennessy, Andrew C. Malonis, Arthur J. Pitera, Steven A. Ringel 2013-12-10
8586452 Methods for forming semiconductor device structures Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie 2013-11-19
8436336 Structure and method for a high-speed semiconductor device having a Ge channel layer Minjoo L. Lee, Christopher Leitz 2013-05-07
8344355 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2013-01-01
8187379 Method of producing high quality relaxed silicon germanium layers Richard Westhoff, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2012-05-29
8120060 Monolithically integrated silicon and III-V electronics 2012-02-21
8106380 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2012-01-31
8063413 Tensile strained GE for electronic and optoelectronic applications Yu Sheng Bai, Minjoo L. Lee 2011-11-22
8063397 Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission Michael J. Mori 2011-11-22
8026534 III-V semiconductor device structures Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld 2011-09-27
8012592 Monolithically integrated semiconductor materials and devices 2011-09-06
7955435 Method of producing high quality relaxed silicon germanium layers Richard Westhoff, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2011-06-07
7884353 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2011-02-08
7846802 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2010-12-07
7838392 Methods for forming III-V semiconductor device structures Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld 2010-11-23
7791107 Strained tri-channel layer for semiconductor-based electronic devices Saurabh Gupta, Minjoo L. Lee 2010-09-07
7776697 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2010-08-17
7705370 Monolithically integrated photodetectors 2010-04-27
7682952 Method for forming low defect density alloy graded layers and structure containing such layers David Isaacson 2010-03-23
7674335 Method of producing high quality relaxed silicon germanium layers Richard Westhoff, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2010-03-09