RW

Richard Westhoff

TSMC: 8 patents #3,198 of 12,232Top 30%
AS Amberwave Systems: 7 patents #8 of 20Top 40%
TL Tokyo Electron Limited: 2 patents #2,602 of 5,567Top 50%
TR The Arizona Board Of Regents: 1 patents #129 of 428Top 35%
University of California: 1 patents #8,022 of 18,278Top 45%
📍 Hudson, NH: #21 of 319 inventorsTop 7%
🗺 New Hampshire: #634 of 12,181 inventorsTop 6%
Overall (All Time): #222,806 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
9934964 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Christopher Leitz, Christopher Vineis, Vicky Yang, Matthew T. Currie 2018-04-03
9309607 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Christopher Leitz, Christopher Vineis, Vicky Yang, Matthew T. Currie 2016-04-12
8823056 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Christopher Leitz, Christopher Vineis, Vicky Yang, Matthew T. Currie 2014-09-02
8187379 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2012-05-29
8129747 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Vicky Yang, Matthew T. Currie, Christopher Vineis, Christopher Leitz 2012-03-06
7955435 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2011-06-07
7829442 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Vicky Yang, Matthew T. Currie, Christopher Vineis, Christopher Leitz 2010-11-09
7674335 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2010-03-09
7615829 Elevated source and drain elements for strained-channel heterojuntion field-effect transistors Anthony J. Lochtefeld, Thomas A. Langdo 2009-11-10
7594967 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy Christopher Vineis, Mayank Bulsara 2009-09-29
7375385 Semiconductor heterostructures having reduced dislocation pile-ups Vicky Yang, Matthew T. Currie, Christopher Vineis, Christopher Leitz 2008-05-20
7368308 Methods of fabricating semiconductor heterostructures Christopher Vineis, Vicky Yang, Matthew T. Currie, Christopher Leitz 2008-05-06
7332417 Semiconductor structures with structural homogeneity Christopher Vineis, Matthew T. Currie, Vicky T. Yang, Christopher Leitz 2008-02-19
7049627 Semiconductor heterostructures and related methods Christopher Vineis, Vicky Yang, Matthew T. Currie, Christopher Leitz 2006-05-23
7041170 Method of producing high quality relaxed silicon germanium layers Eugene A. Fitzgerald, Matthew T. Currie, Christopher Vineis, Thomas A. Langdo 2006-05-09
6632737 Method for enhancing the adhesion of a barrier layer to a dielectric Joseph T. Hillman, Tugrul Yasar 2003-10-14
6482477 Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto Steven P. Caliendo, Joseph T. Hillman 2002-11-19
6064081 Silicon-germanium-carbon compositions and processes thereof McDonald Robinson, Charles E. Hunt, Li Ling, Ziv Atzmon 2000-05-16
5961877 Wet chemical etchants McDonald Robinson, Charles E. Hunt, Li Ling 1999-10-05
5906708 Silicon-germanium-carbon compositions in selective etch processes McDonald Robinson, Charles E. Hunt, Li Ling 1999-05-25