Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12266612 | Method for forming a semiconductor device including forming a first interconnect structure on one side of a substrate having first metal feature closer the substrate than second metal feature and forming first and second tsv on other side of substrate connecting to the metal features | Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Yung-Chi Lin | 2025-04-01 |
| 11854990 | Method for forming a semiconductor device having TSV formed through a silicon interposer and a second silicon substrate with cavity covering a second die | Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Yung-Chi Lin | 2023-12-26 |
| 10923431 | Method for forming a 3D IC architecture including forming a first die on a first side of a first interconnect structure and a second die in an opening formed in a second side | Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Yung-Chi Lin | 2021-02-16 |
| 10297550 | 3D IC architecture with interposer and interconnect structure for bonding dies | Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Yung-Chi Lin | 2019-05-21 |
| 6849526 | Method of improving device resistance | Chun-Yi Yang, Shi-Xian Chen, Gwen Chang | 2005-02-01 |
| 6787408 | Method for forming an electrical insulating layer on bit lines of the flash memory | Chien-Wei Chen | 2004-09-07 |
| 6734107 | Pitch reduction in semiconductor fabrication | Chien-Wei Chen | 2004-05-11 |
| 6720629 | Structure of a memory device with buried bit line | Chun-Yi Yang, Shi-Xian Chen, Gwen Chang | 2004-04-13 |
| 6548385 | Method for reducing pitch between conductive features, and structure formed using the method | — | 2003-04-15 |
| 6537917 | Method for fabricating electrically insulating layers | Chien-Wei Chen | 2003-03-25 |
| 6518103 | Method for fabricating NROM with ONO structure | — | 2003-02-11 |
| 6492214 | Method of fabricating an insulating layer | Chien-Wei Chen, Shin-Yi Tsai, Ming-Chung Liang | 2002-12-10 |